The Role of (111)MgO Underlayer in Growth of c-axis Oriented Barium Ferrite Films

Effect of Underlayer Quality on Microstructure, Stoichiometry, and Magnetic Properties of Hexaferrite BaFe12O19 Grown on YSZ(111) by Pulsed Laser Deposition

“…It was demonstrated that a BaM recording layer with perpendicular easy magnetization was formed on a substrate by means of an underlayer that favors the BaM layer growth with the easy magnetization direction perpendicular to the substrate . Several buffer layers, such as Au, Pt, ,,,, Pd, YSZ, ZnO, AlN, , TiO 2 , and MgO, , were used to reduce the element interdiffusion between the substrate and the magnetic film. This has been demonstrated to strongly affect the microstructure and therefore the magnetic properties since the insertion of the underlayer modified the mismatch between the BaM layer and the substrate.…”

“…This has been demonstrated to strongly affect the microstructure and therefore the magnetic properties since the insertion of the underlayer modified the mismatch between the BaM layer and the substrate. There were few attempts devoted to understand the influence of the underlayer material and thickness on the microstructure and on the magnetic properties of BaM ,,,, and strontium ferrites (SrM) . Few studies investigated the effect of the Pt underlayer thickness on the coercivity and on the squareness of the BaM layer without exploring the modification of the Pt microstructure as a function of the Pt film thickness, which occurred during the subsequent BaM growth. ,, It is well-known that the coercivity depends on the chemical composition, temperature, and magnetic anisotropy as well as strongly on the microstructure .…”

“…Several difficulties were encountered during the growth of BaM films by sputtering, − pulsed laser deposition (PLD), , molecular beam epitaxy (MBE), and others. These limitations included chemical intermixing between the BaM layer and the used substrates like SiO 2 , , SiC, MgO, Al 2 O 3 , and YSZ(111) . It was demonstrated that a BaM recording layer with perpendicular easy magnetization was formed on a substrate by means of an underlayer that favors the BaM layer growth with the easy magnetization direction perpendicular to the substrate .…”