2023
DOI: 10.1088/1402-4896/ace1b5
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The role of a highly optimized approach with superior transparent conductive oxide anode towards efficient organic solar cell

Abstract: The effort emphasizes the numerical analysis of different transparent conducting oxides (TCOs) perspectives, which include ITO, FTO, AZO, and IZO anode-based organic solar cells (OSCs) with the drift-diffusion approach. The prior selection of aluminum-doped zinc oxide (AZO) as TCO is feasible for more extended transparency and antireflection due to a tailored absorption wavelength of <380 nm and the factors of higher mechanical flexibility, low-cost processing, and realistic performance at lower temperature… Show more

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Cited by 6 publications
(10 citation statements)
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“…Furthermore, the favorable alignment of the band structure of P 3 HT: PC 61 BM in the OSC results in higher FF, J SC , and V OC . Thicker OALs increase power generation by increasing charge carrier density (ρ), potentially resulting in slower charge extraction and an enhanced R n,p [5,25,36]. The latest analysis similarly develops a close relationship between the V OC standards, with both examples indicating 0.88 Volt and 0.57 Volt for previous reports [7,13, 16, and 20], respectively.…”
Section: The Combined Influence Of Altered Oals and Thickness On Pv P...mentioning
confidence: 54%
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“…Furthermore, the favorable alignment of the band structure of P 3 HT: PC 61 BM in the OSC results in higher FF, J SC , and V OC . Thicker OALs increase power generation by increasing charge carrier density (ρ), potentially resulting in slower charge extraction and an enhanced R n,p [5,25,36]. The latest analysis similarly develops a close relationship between the V OC standards, with both examples indicating 0.88 Volt and 0.57 Volt for previous reports [7,13, 16, and 20], respectively.…”
Section: The Combined Influence Of Altered Oals and Thickness On Pv P...mentioning
confidence: 54%
“…Even a minor change in OAL width can entirely affect the total output of the OSC device. The preferable width of the OAL in the structure under consideration is 250 nm, which appears in table 1 through validation by experimentation [5,11]. This level of detail width is essential in establishing optical distribution and exciton generation patterns, which have a significant effect on charge carrier movement for the mainstream of excellent OSC performances.…”
Section: Proposed Device Structurementioning
confidence: 99%
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