The role of AlN thickness in MOCVD growth of N-polar GaN

Li, Yangfeng; Hu, Xiaotao; Song, Yimeng; Su, Zhaole; Wang, Wenqi; Jia, Haiqiang; Wang, Wenxin; Jiang, Yang; Chen, Hong

doi:10.1016/j.jallcom.2021.161134

Cited by 15 publications

(11 citation statements)

References 45 publications

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“…The rocking curves as well as the full-width at half-maximum (FWHM) values for GaN (002) and (102) planes are presented in Figure 1 b. The relatively lower FWHM values indicate reduced dislocation densities both for screw and edge components [ 21 , 22 ]. Figure 1 c delineates the omega-2 theta (ω-2 θ) curve of the as-grown sample with the light grey line as the fitted line.…”

Section: Resultsmentioning

confidence: 99%

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Liu

Zhang

et al. 2022

Materials

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Dual-wavelength multiple quantum wells (MQWs) have great potential in realizing high quality illumination, monolithic micro light-emitting diode (LED) displays and other related fields. Here, we demonstrate a single chip white light indium gallium nitride (InGaN) LED via the manipulation of the dual-wavelength MQWs. The MQWs contain four pairs of blue light-emitting MQWs and one pair of green light-emitting QW. The fabricated LED chips with nickel/gold (Ni/Au) as the current spreading layer emit white light with the injection current changing from 0.5 mA to 80 mA. The chromaticity coordinates of (0.3152, 0.329) closing to the white light location in the Commission International de I’Eclairage (CIE) 1931 chromaticity diagram are obtained under a 1 mA current injection with a color rendering index (CRI) Ra of 60 and correlated color temperature (CCT) of 6246 K. This strategy provides a promising route to realize high quality white light in a single chip, which will significantly simplify the production process of incumbent white light LEDs and promote the progress of high-quality illumination.

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Section: Resultsmentioning

confidence: 99%

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Liu

Zhang

et al. 2022

Materials

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“…Therefore, it is an ideal substrate material superior to SiC and sapphire. [7][8][9][10] However, the lack of sufficiently large and perfect single crystals currently limits the development of this substrate material with great potential. As a result, preparing large-size and high-quality bulk AlN single crystals has recently become an important research topic.…”

Section: Introductionmentioning

confidence: 99%

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

Peng,

Yao,

Miao

et al. 2024

CrystEngComm

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“…Gallium nitride (GaN) is a group III–V semiconductor material with excellent physical and chemical properties, such as high thermal stability, high voltage resistance, and high electron mobility − and has been widely used in laser diodes, high-power electronic and microwave devices, high-frequency electronic devices, and UV photodetectors. − Currently, the mainstream processes for GaN crystal growth include metal–organic chemical vapor deposition (MOCVD), , gold hydride vapor phase epitaxy (HVPE), , and molecular beam epitaxy (MBE). , Due to their unique physical and chemical properties and increasingly mature preparation systems, GaN material is considered one of the most competitive semiconductor materials in the field of electronics and optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation

Wang

Gao

et al. 2023

Crystal Growth & Design

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Understanding the formation mechanism of gallium nitride (GaN) crystals in different crystal orientations to optimize the crystal quality and improve device performance is important to achieving high-performance devices. Despite significant advances in experimental techniques to study the microstructure and anisotropic differences during semiconductor crystal growth, it is still difficult to dynamically observe the microstructure evolution during GaN crystal growth at the atomic level. In this paper, the anisotropic differences in the induced growth of GaN crystals are investigated by means of molecular dynamics simulations. The results show that the crystal defects in each crystal orientation show a decreasing trend during induced growth. The generation and motion of dislocations in the GaN crystals are anisotropic. The microstructure evolution during the anisotropic growth of crystals and the mechanism of defect structure formation were investigated in detail by crystal-induced melt growth in three crystal orientations, and it was found that the crystals grown in the [1̅ 21̅ 0] crystal orientation possess optimal growth quality. These results show the growth mechanism of GaN in different crystal orientations and provide theoretical guidance for the preparation of highquality GaN.

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The role of AlN thickness in MOCVD growth of N-polar GaN

Cited by 15 publications

References 45 publications

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation

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