The role of ambient gas scattering effect and lead oxide formation in pulsed laser deposition of lead–zirconate–titanate thin films

Abstract

The angular distribution of lead in films deposited by pulsed laser irradiation of lead–zirconate–titanate and lead targets are studied as a function of ambient gas (argon or oxygen), gas pressure, and substrate temperature. When the substrate is kept in vacuum and at room temperature, a dip in the lead content attributable to the intrinsic resputtering of lead is observed at the position of the target surface normal. In the presence of an ambient gas, the dip disappears and the lead content increases at all angles. These results are attributed to a reduction of resputtering arising from scattering of the ablated species by ambient gas molecules. Under ambient oxygen and at high substrate temperature, the retention of lead content in the deposited films is largely due to the formation of lead oxide.

A Novel Approach for Fabricating LaMnO3 Thin Films Using Combined Microwave Combustion and Pulsed Electron Deposition Techniques

“…In vacuum deposition techniques, gas ambient may also have a great in uence on the structure and morphology of the thin lms [40]. We also studied the e ect of the N 2 /O 2 ux ratio on the LMO thin lm prepared by pulse electron deposition.…”

Aging in epitaxial ferroelectric PbTiO3 films

“…This behavior can be explained by an additional decrease of the PTO resistance due to formation of lead and/or oxygen vacancies during PLD from pre-ablated target. [22][23][24][25] Assuming that the low-frequency losses are related to the PTO resistance, the dynamic resistance R F of the PTO films can be estimated as R F % (2 Á tan D Á CÞ À1 . 28,29 The resistance is approximately 6 k in the 300*-nm-thick PTO and it is larger than 10 M in other films.…”

“…The procedure is known to induce lead and/or oxygen vacancies in the PTO deposit because of compositional changes on the surface of the ablated PTO target. [22][23][24][25] The sample is denoted as \300*-nm" herein.…”

Control of Layering in Aurivillius Phase Nanocomposite Thin Films and Influence on Ferromagnetism and Optical Absorption

“…Deposition parameters (pulse number P , pulse frequency f , laser fluence J , background pressure p , substrate temperature T , and substrate-to-target distance d ) vary in this study, and the information is given in the main text accordingly. In addition to oxygen, argon was used as a background gas to disentangle control over plume kinetics and thermal re-evaporation on one side and oxidation process on the other. , The structure of the thin films was analyzed with ex situ high-resolution X-ray diffractometry in a Bruker DISCOVER D8 diffractometer.…”

“…In addition to oxygen, argon was used as a background gas to disentangle control over plume kinetics and thermal re-evaporation on one side and oxidation process on the other. 25,26 The structure of the thin films was analyzed with ex situ high-resolution X-ray diffractometry in a Bruker DISCOVER D8 diffractometer.…”