The Role of Au in the Thermoelectric Properties of Amorphous Ge/Au and Si/Au Thin Films

Takiguchi, Hiroaki; Yoshikawa, Z.; Miyazaki, Hisashi; Morimoto, Jun

doi:10.1007/s11664-010-1267-4

Cited by 15 publications

(17 citation statements)

References 13 publications

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“…[6][7][8] Therefore, despite their high cost, Au-Ge-based alloys have been proposed as possible high-temperature leadfree solder materials for highly loaded components such as high-power microelectromechanical systems (MEMS) devices but also in space technology as well as for corrosion-resistant solders for components exposed to aggressive media such as for sensors in corrosive atmospheres and biomedical devices. [9][10][11] The soldering process consists in the formation of a joint between the molten solder and a solid metal substrate. The ability of a liquid alloy to flow or spread on the substrate is crucial for the formation of a metallic bond driven by the physicochemical properties of the liquid solder/solid substrate system.…”

Section: Introductionmentioning

confidence: 99%

Wetting and Soldering Behavior of Eutectic Au-Ge Alloy on Cu and Ni Substrates

Leinenbach

Valenza

Giuranno

et al. 2011

Journal of Elec Materi

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Au-Ge-based alloys are interesting as novel high-temperature lead-free solders because of their low melting point, good thermal and electrical conductivity, and high corrosion resistance. In the present work, the wetting and soldering behavior of the eutectic Au-28Ge (at.%) alloy on Cu and Ni substrates have been investigated. Good wetting on both substrates with final contact angles of 13°to 14°was observed. In addition, solder joints with bond shear strength of 30 MPa to 35 MPa could be produced under controlled conditions. Cu substrates exhibit pronounced dissolution into the Au-Ge filler metal. On Ni substrates, the NiGe intermetallic compound was formed at the filler/substrate interface, which prevents dissolution of Ni into the solder. Using thin filler metal foils (25 lm), complete consumption of Ge in the reaction at the Ni interface was observed, leading to the formation of an almost pure Au layer in the soldering zone.

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Section: Introductionmentioning

confidence: 99%

Wetting and Soldering Behavior of Eutectic Au-Ge Alloy on Cu and Ni Substrates

Leinenbach

Valenza

Giuranno

et al. 2011

Journal of Elec Materi

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“…An actual experiment has been reported studying the role of gold (Au) in the thermoelectric properties of amorphous Ge/Au and Si/Au thin films. 11) In the experiment, four specimens containing two different layers were prepared. Two of them had Ge and Au layers, with different thicknesses of the Au layer for each of the two specimens.…”

Section: Resultsmentioning

confidence: 99%

Computer Simulation of Precipitation Process in Si/Ge Amorphous Multi-Layer Films: Effects of Cu Addition

2013

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“…The samples were deposited using ultra high vacuum evaporation system, as same as previous study [12,13]. The evaporation system has two electron beam guns, Ge (Furuuchi Chemicals, 99.99% up) and Au (High Purity Chemicals, 99.9% up).…”

Section: Methodsmentioning

confidence: 99%

“…The detailed electrical measurement system was shown in Refs. [12,13]. We measured the electrical resistivity dependence on the temperature from room temperature to 473, 673, and 873 K.…”

Section: Methodsmentioning

confidence: 99%

“…To reduce the duration of annealing process, we focused on the multilayered structure of a-Si/Au and aSiGe/Au, because a-Si/Au structure of MIC is the lowest crystallization temperature comparison with other a-Si/metal structure [10]. The annealing time using multilayered structure is shorter than that of using bi-layer structure [11][12][13]. Therefore, multilayered structure has an advantage to reduce the cost and the preparing time.…”

Section: Introductionmentioning

confidence: 99%

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