2020
DOI: 10.1039/d0ee01896a
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The role of bulk and interfacial morphology in charge generation, recombination, and extraction in non-fullerene acceptor organic solar cells

Abstract: Some fundamental questions in the organic solar cell (OSC) community are related to the role of bulk and interfacial morphology on key processes such as charge generation, recombination, and extraction...

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Cited by 154 publications
(206 citation statements)
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References 81 publications
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“…PM6:Y6 has gathered much attention due to performances of over 15% and has become a well‐studied model system for solar cells based on Y‐series acceptors. [ 16,18,51–53 ] Overall, the behavior of this system is very similar to the discussed performance changes of the PTB7‐Th:IOTIC‐4F system. The PCE of 15.4% (0% added catalyst) decreases to 15.0, 12.5, and 10.5% for devices with 0.75, 3, and 7% Pd(PPh 3 ) 4 , respectively (see Table S4 and Figure S24, Supporting Information).…”
Section: Resultssupporting
confidence: 60%
See 1 more Smart Citation
“…PM6:Y6 has gathered much attention due to performances of over 15% and has become a well‐studied model system for solar cells based on Y‐series acceptors. [ 16,18,51–53 ] Overall, the behavior of this system is very similar to the discussed performance changes of the PTB7‐Th:IOTIC‐4F system. The PCE of 15.4% (0% added catalyst) decreases to 15.0, 12.5, and 10.5% for devices with 0.75, 3, and 7% Pd(PPh 3 ) 4 , respectively (see Table S4 and Figure S24, Supporting Information).…”
Section: Resultssupporting
confidence: 60%
“…To demonstrate the applicability to other NFA based systems, we further show the performance changes upon catalyst addition to the PM6:Y6 system, which has gathered much attention due to its performance of over 15%. [ 51–53 ]…”
Section: Introductionmentioning
confidence: 99%
“…The range of light intensities I ≈ 10–100 mW cm −2 is the most suitable and commonly used for testing the dominant recombination mechanisms as it is not influenced by leakage losses and enhanced photodegradation. [ 42–49 ] As shown in previous study, [ 50 ] the parasitic effect of the shunt resistance R sh > 10 kΩ cm 2 (that is the case for our devices: R sh ranges from 0.1 to 1 MΩ cm 2 ) becomes negligible at light intensities I ≥ 10 mW cm −2 since the flux of photogenerated charge carriers significantly exceeds the leakage and thus does not result in errors during the fitting of the experimental data. Light intensities >100 mW cm −2 may result in a significant enhancement of photodegradation processes, rendering any effort to model the recombination dynamics under these conditions pointless.…”
Section: Resultssupporting
confidence: 69%
“…Parameters of influence include the processing and annealing conditions and the resulting morphologies of both layers, the roughness and homogeneity of the interface, the layers’ composition and the resulting changes in surface energy. [ 37–39 ]…”
Section: Resultsmentioning
confidence: 99%