Bulk GeAs2 was synthesized utilizing a vapor transport reaction with iodine. Thermal stability tests under dynamic conditions show that GeAs2 decomposes below 700 K, in contrast to the reported congruent melting at 1029 K measured at saturated As vapor pressure. GeAs2 is a p-type narrow bandgap (~0.4 eV) semiconductor. From a thermoelectric standpoint, GeAs2 outperforms previous computational predictions in thermopower and thermal conductivity. However, electrical resistivity is significantly higher than predicted values, resulting in the low overall thermoelectric figure-of-merit. Aliovalent doping strategies for GeAs2 should be developed to achieve reasonable thermoelectric performance.