The role of Cu(InGa)(SeS)/sub 2/ surface layer on a graded band-gap Cu(InGa)Se/sub 2/ thin-film solar cell prepared by two-stage method

Kushiya, Katsumi; Kuriyagawa, S.; Kase, T.; Tachiyuki, M.; Sugiyama, I.; Satoh, Yasuo; Satoh, Masataka; Takeshita, Hiroshi

doi:10.1109/pvsc.1996.564296

Cited by 24 publications

(16 citation statements)

References 6 publications

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“…of Time freeze experiments [33]. Detailed investigation focusing on the reactivity of selenium and sulfur by decomposition of reaction gases is not widely performed, although absorber formation reactions during the SAS method should be well understood to improve the quality of CIS-based absorber quality including the surface quality and, as the result, the efficiency.…”

Section: Historical View Of Selenization and Sulfurizationmentioning

confidence: 99%

CIGS absorbers and processes

Niki¹,

Contreras²,

Repins³

et al. 2010

Progress in Photovoltaics

418

232

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The current status and future perspectives of Cu(In 1Àx Ga x )Se 2 (CIGS) solar cells and modules will be discussed in this paper. The conversion efficiencies of the state of the art laboratory-scale CIGS solar cells exceeded 20%, which are comparable to those of crystalline Si solar cells. The requirements on the properties of CIGS absorbers to achieve such high efficiencies will be described. The CIGS modules are already commercially available based on two major CIGS deposition techniques such as co-evaporation and selenization. The current status, problems, and prospects of co-evaporation and selenization will also be discussed. High-efficiency flexible CIGS solar cells with efficiencies similar to those fabricated on soda-lime glass (SLG) substrates have been achieved by developing a novel Na incorporation technique. Critical issues to demonstrate high-efficiency flexible solar cells will also be discussed.

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Section: Historical View Of Selenization and Sulfurizationmentioning

confidence: 99%

CIGS absorbers and processes

Niki¹,

Contreras²,

Repins³

et al. 2010

Progress in Photovoltaics

418

232

View full text Add to dashboard Cite

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“…Such large-grain growth is related to the liquid-phase growth of CIGS with the aid of Cu x Se flux. 22) This is because Cu-Se flux growth occurs during selenization, 2,8,[23][24][25][26] and large grains with (112) facets are formed at a high selenization temperature of 540 C.…”

Section: Second-step Selenization Temperaturementioning

confidence: 99%

“…The detailed reaction pathways of the selenization process have been studied. 2,3) A CIGS solar cell module with a high conversion efficiency of 17.2% has been realized using the CIGS-related absorber film prepared by the selenization method. 2,3) However, the H 2 Se gas used for such a manufacturing process is very toxic and hazardous.…”

Section: Introductionmentioning

confidence: 99%

Growth Conditions and Structural Properties of Cu(In,Ga)Se₂ Thin Films Prepared by Selenization Method Using Diethylselenide

Uchikoshi

Shirakata

2012

Jpn. J. Appl. Phys.

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The relationship between the selenization conditions and structural properties of Cu(In,Ga)Se 2 (CIGS) thin films was investigated for the selenization method using diethylselenide (DESe). The grain structure changed markedly depending on selenization temperature, selenization time, and DESe flow rate. The CIGS thin films selenized at a high temperature (HT: 500-540 C), which is referred to as a one-step selenization are very rough. On the other hand, the films selenized at a low temperature (LT: 350-450 C) exhibited a relatively uniform thickness and densely packed grains, although they contain second binary phases such as In-Se and Cu 9 Ga 4 . To form a single-phase chalcopyrite CIGS film, a twostep selenization method is examined, in which the films selenized at LT (first step) are subsequently selenized at HT (second step). Single-phase densely packed CIGS thin films with uniform thickness were obtained by the two-step selenization. The use of the InSe/Cu 0:7 Ga 0:3 precursor was proposed, and the selenization of this precursor successfully yielded single-phase CIGS thin films with a flat surface. The importance of the role of InSe during the selenization process using DESe is discussed. #

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“…Graded absorber structures with S-rich surface and Ga-rich contact regions have been grown and high efficiency solar cells have been fabricated on such graded absorbers [1]. Additional work describing S introduction into CIGS absorber layers by annealing these films in a H 2 S atmosphere has also been published [2,3,4].…”

Section: Sulfur Diffusion Studiesmentioning

confidence: 99%

CIS-Type PV Device Fabrication by Novel Techniques; Phase I Annual Technical Report, 1 July 1998 - 30 June 1999

Başol¹,

Halani²,

Kapur³

et al. 1999

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The role of Cu(InGa)(SeS)/sub 2/ surface layer on a graded band-gap Cu(InGa)Se/sub 2/ thin-film solar cell prepared by two-stage method

Cited by 24 publications

References 6 publications

CIGS absorbers and processes

CIGS absorbers and processes

Growth Conditions and Structural Properties of Cu(In,Ga)Se₂ Thin Films Prepared by Selenization Method Using Diethylselenide

CIS-Type PV Device Fabrication by Novel Techniques; Phase I Annual Technical Report, 1 July 1998 - 30 June 1999

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The role of Cu(InGa)(SeS)/sub 2/ surface layer on a graded band-gap Cu(InGa)Se/sub 2/ thin-film solar cell prepared by two-stage method

Cited by 24 publications

References 6 publications

CIGS absorbers and processes

CIGS absorbers and processes

Growth Conditions and Structural Properties of Cu(In,Ga)Se2 Thin Films Prepared by Selenization Method Using Diethylselenide

CIS-Type PV Device Fabrication by Novel Techniques; Phase I Annual Technical Report, 1 July 1998 - 30 June 1999

Contact Info

Product

Resources

About

Growth Conditions and Structural Properties of Cu(In,Ga)Se₂ Thin Films Prepared by Selenization Method Using Diethylselenide