The role of deep donor–deep acceptor complexes in CIS-related compounds

Krustok, J.; Raudoja, J.; Schön, J. H.; Yakushev, M. V.; Collan, H.

doi:10.1016/s0040-6090(99)00756-7

Cited by 45 publications

(33 citation statements)

References 11 publications

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“…Literature information [17,20,21,[43][44][45][46][47] on the different mechanisms of emissions can be compiled into the comprehensive emission model presented in Figure 4. As shown in Figure 4, besides excitonic emission [1(a), 1(b) and (2)], defects such as atom vacancy (V s ··, V In ″′, V Cu ′), indium or copper interstitial (In i ···, Cu i ··), and indiumcopper antisite (Cu In ″, In Cu ··) can also generate emission through the recombination with band (conduction or valance band) or between defects.…”

Section: Synthesis Of Cis Core Particlesmentioning

confidence: 99%

Optimization of the recipe for the synthesis of CuInS₂/ZnS nanocrystals supported by mechanistic considerations

Luan

et al. 2016

Green Processing and Synthesis

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CuInS 2 /ZnS (CIS/ZnS) quantum dots (QDs) with high photoluminescence (PL) were synthesized via a facile solvothermal approach. Gaussian deconvolution of PL spectra, transmission electron microscopy, and timeresolved PL spectroscopies were used to characterize the emission properties of the prepared CIS and CIS/ZnS QDs. It was found that the growth of ZnS can reduce the surface defect acting as traps to minimize donor-acceptor emissions, and the contribution of band to donor/acceptor transition becomes a dominating emission with the increase of shell growth time. The blue shift of PL emission wavelength of CIS/ZnS QDs underwent two steps: the dramatic blue shift originated from the decreased fraction donor-acceptor transition due to the reduction of surface defects at the beginning and the subsequently mild blueshift with the time from the interdiffusion of CIS and ZnS. The effect of trioctylphosphine (TOP) and dodecanethiol (DDT) as ligands during shell growth on the optical properties of QDs were investigated and compared. The PL quantum yield (QY) of CIS core affects the final value of CIS/ ZnS QDs, and the higher PL QY is achieved while using CIS core with higher PL QY. Based on the selected ligand DDT, the reaction parameters, such as CIS core reaction time, shell growth time, and Zn/Cu feed molar ratio, were further optimized. CIS/ZnS QDs with high PL QY can be obtained with a Zn/Cu feed molar ratio larger than 4, shell growth time of 30 to 90 min, and shell growth temperature 220°C-240°C, and the maximum value was up to about 80% by adjusting the above-mentioned parameters.

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Section: Synthesis Of Cis Core Particlesmentioning

confidence: 99%

Optimization of the recipe for the synthesis of CuInS₂/ZnS nanocrystals supported by mechanistic considerations

Luan

et al. 2016

Green Processing and Synthesis

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“…In photoluminescence studies of CuInS 2 and CuIn 0.5 Ga 0.5 Se 2 a similar defect transition, near 0.86 eV, has been detected. 13 By taking values of n/p into account and assuming that the optical cross section and densities of states for the bandto-band transition are similar for all samples, relative values of the defect density, N D , can be estimated. These are listed in Table I.…”

Section: 5mentioning

confidence: 99%

Effect of Ga content on defect states in CuIn1−xGaxSe2 photovoltaic devices

Heath

Cohen

Shafarman

et al. 2002

Applied Physics Letters

204

107

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Defects in the band gap of CuIn1−xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.

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“…Interpretation and modeling of device results suggest that device performance is limited by ShockleyReed-Hall type recombination of photogenerated carriers in the space charge region [1]. Identification of the defects mediating this recombination has proven difficult and no particular defect has been shown to be responsible [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Almost as many PL studies have been performed on the wide gap compound CuGaSe 2 as on CuInSe 2 . To date, there has been no fundamental difference identified between defect spectra of CuInSe 2 and CuGaSe 2 -the transition energies are different but the general behavior is relatively similar. Siebentritt et al [12] have summarized composition-dependent PL and electrical transport measurements on such material.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

2009

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The role of intrinsic point defects on radiative recombination in Cu(In,Ga)Se 2 thin films was investigated by photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Experiments were performed on device-grade polycrystalline layers and single crystal thin films. PL transitions identified by others as indicating a shallow state with an ionization energy of ~16 meV is proposed to be a transition into band tail states rather than a distinct shallow defect.

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The role of deep donor–deep acceptor complexes in CIS-related compounds

Cited by 45 publications

References 11 publications

Optimization of the recipe for the synthesis of CuInS₂/ZnS nanocrystals supported by mechanistic considerations

Optimization of the recipe for the synthesis of CuInS₂/ZnS nanocrystals supported by mechanistic considerations

Effect of Ga content on defect states in CuIn1−xGaxSe2 photovoltaic devices

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

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The role of deep donor–deep acceptor complexes in CIS-related compounds

Cited by 45 publications

References 11 publications

Optimization of the recipe for the synthesis of CuInS2/ZnS nanocrystals supported by mechanistic considerations

Optimization of the recipe for the synthesis of CuInS2/ZnS nanocrystals supported by mechanistic considerations

Effect of Ga content on defect states in CuIn1−xGaxSe2 photovoltaic devices

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2Thin Films

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Optimization of the recipe for the synthesis of CuInS₂/ZnS nanocrystals supported by mechanistic considerations

Optimization of the recipe for the synthesis of CuInS₂/ZnS nanocrystals supported by mechanistic considerations

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films