2021
DOI: 10.3390/cryst11010073
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The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

Abstract: Cadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25 °C to 400 °C. The influence of deposition or growth temperature on the structural, morphological, and opto-electrical properties of CdSe films was investigated elaborately to achieve a good-quality window layer for solar-cell applications. The crystal structure, surface morphology, and opto-electrical … Show more

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Cited by 23 publications
(10 citation statements)
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“…Among these binary photoelectrode materials, CdSe and CdTe materials provided band gap values between 1.45 and 1.75 eV [1,[21][22][23][24][25][26][27][28][29][30]; this indicates that the lower band gap energy photoelectrodes provided higher optical absorption. The higher optical absorption of the photoelectrode material provides more electron-hole pairs as well as a higher rate of the recombination rates of charge carriers [21,22]. The significance of selecting particular compositions is that the CdSe 0.6 Te 0.4 electrode shows a sharp transition from the properties of CdSe to those typical of CdTe in the composition [31].…”
Section: Introductionmentioning
confidence: 97%
See 1 more Smart Citation
“…Among these binary photoelectrode materials, CdSe and CdTe materials provided band gap values between 1.45 and 1.75 eV [1,[21][22][23][24][25][26][27][28][29][30]; this indicates that the lower band gap energy photoelectrodes provided higher optical absorption. The higher optical absorption of the photoelectrode material provides more electron-hole pairs as well as a higher rate of the recombination rates of charge carriers [21,22]. The significance of selecting particular compositions is that the CdSe 0.6 Te 0.4 electrode shows a sharp transition from the properties of CdSe to those typical of CdTe in the composition [31].…”
Section: Introductionmentioning
confidence: 97%
“…To date, several binary metal chalcogenide photoelectrode materials have been developed into PECs as photoabsorber layers, including CdS [13,14], CdSe [15,16], CdTe [17], ZnS [18], ZnSe [19], and ZnSe/CdSe [20]. Among these binary photoelectrode materials, CdSe and CdTe materials provided band gap values between 1.45 and 1.75 eV [1,[21][22][23][24][25][26][27][28][29][30]; this indicates that the lower band gap energy photoelectrodes provided higher optical absorption. The higher optical absorption of the photoelectrode material provides more electron-hole pairs as well as a higher rate of the recombination rates of charge carriers [21,22].…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, CdSe nanoparticles have been very interesting in the study community with their maximum demands regarding their application in optical electronics. CdSe was a largely used semiconductor compound because of its direct bandgap (1.74 ev) at a normal temperature radius of 5.6 nm from Bohr's theory [2,3]. The size of cadmium selenide increased the volume ratio; so, it can be found vastly in different fields from lightemitting diode to photovoltaic cells.…”
Section: Introductionmentioning
confidence: 99%
“…Numerous researches have been conducted to attain the operation of observable light for TiO 2 material, like transitional metallic ions (ZnO, SiO 2 ) and nonmetal element doping such as carbon nanotube (C-N-T). Nonmetal element doping conventions bandgap of titanium dioxide by providing a novel mixture energy band whose excite level is slightly higher than that of the valence band of titanium dioxide (TiO 2 ) [32][33][34][35]. But these methods of preparation cannot improve wastewater treatment unless the alteration of property of SiO 2 nanoparticle.…”
Section: Introductionmentioning
confidence: 99%