The Role of H-Plasma in Aluminum Induced Crystallization of Amorphous Silicon

Abstract

A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm 2 /V·s to 42.5 cm 2 /V·s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.