The role of hydrogen in a-C:H films deposited from hexane or acetylene using direct ion beam deposition method

Grigonis, A.; Šablinskas, Valdas; Šilinskas, M.; Tribandis, Darius

doi:10.1016/j.vacuum.2004.03.006

Cited by 23 publications

(14 citation statements)

References 20 publications

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“…In contrast to our results, experimentally measured rate of direct ion beam deposition (DIBD) by Grigonis et al [19] declines in entire range of H content in the gas mixture (inset in Fig. 2).…”

Section: Deposition Rate Of A-c:h Filmcontrasting

confidence: 99%

“…1 inset [19]. This is expected because C H is proportional to H flux, and relation between n r and mass density of a-C:H is confirmed by many authors [1,6,19].…”

Section: Density Of the Filmmentioning

confidence: 67%

“…Calculated deposition rate of a-C:H film versus H flux density. Inset: deposition rate as a function of H content in acetylene / hydrogen and hexane / hydrogen gas mixtures [19]. film density remains close to the density of silicon substrate (2.33 g/cm 3 ).…”

Section: Density Of the Filmmentioning

confidence: 88%

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Kinetic modelling of a-C:H thin fllm chemical vapour deposition on Si substrate

Ibenskas¹

2007

Lithuanian J. Phys.

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We simulated plasma enhanced chemical vapour deposition (CVD) of amorphous hydrogenated carbon (a-C:H) films on c-Si substrate using our new reaction rate model. Dependences of film deposition rate and mass density on the flux of atomic hydrogen were calculated for various CH3 fluxes and various ion energies. The calculated curves agree qualitatively with experimental results. Film deposition rate, as a function of hydrogen flux, has a maximum, which could be explained by (i) stabilization of dangling bond (DB) concentration on the surface and (ii) increased etching at high hydrogen fluxes. The results of simulation and experiments do not indicate any significant effect of ion energy variation on hydrogen content in the film. Detailed analysis of calculated dependences of sp 3 /sp 2 ratio and hydrogen content on ion energy has revealed some interesting facts. First, the main mechanism of sp 3 bond formation is adsorption of CH3 on the surface. Also, as expected, the content of sp 3 declines at higher ion energies due to graphitization.

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Section: Deposition Rate Of A-c:h Filmcontrasting

confidence: 99%

“…1 inset [19]. This is expected because C H is proportional to H flux, and relation between n r and mass density of a-C:H is confirmed by many authors [1,6,19].…”

Section: Density Of the Filmmentioning

confidence: 67%

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Kinetic modelling of a-C:H thin fllm chemical vapour deposition on Si substrate

Ibenskas¹

2007

Lithuanian J. Phys.

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“…Therefore this ion is suggested to play an important role in the growth of CNTs/CNFs, for the conditions under study. It is stated that hydrocarbon ions play a key role in the formation of amorphous carbon films [45]. At conditions with low C 2 H 2 fraction, most hydrocarbon ions show a relatively low flux as is clear from figure 6 (c, d), which would efficiently suppress the amorphous carbon growth.…”

Section: Effect Of Gas Mixture Ratiosmentioning

confidence: 92%

Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma-enhanced CVD system: the effect of processing parameters

Mao¹,

Bogaerts²

2010

J. Phys. D: Appl. Phys.

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To cite this version:M Mao, A Bogaerts. Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma-enhanced CVD system: the effect of processing parameters. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (31) Abstract.A parameter study is carried out for an inductively coupled plasma used for the synthesis of carbon nanotubes or carbon nanofibers (CNTs/CNFs), by means of the Hybrid Plasma Equipment Model (HPEM). The influence of processing parameters including gas ratio for four different gas mixtures typically used for CNT/CNF growth (i.e., CH 4 /H 2 , CH 4 /NH 3 , C 2 H 2 /H 2 and C 2 H 2 /NH 3 ), ICP power (50~1000W), operating pressure (10mTorr~1Torr), bias power (0~1000W) and temperature of the substrate (0~1000°C) on the plasma chemistry is investigated and the optimized conditions for CNT/CNF growth are analyzed. Summarized, our calculations suggest that a lower fraction of hydrocarbon gases (CH 4 or C 2 H 2 , i.e., below 20%) and hence a higher fraction of etchant gases (H 2 or NH 3 ) in the gas mixture result in more "clean" conditions for controlled CNT/CNF growth. The same applies to a higher ICP power, a moderate ICP gas pressure above 100 mTorr (at least for SWCNTs), a high bias power (for aligned CNTs), and an intermediate substrate temperature.

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“…Recently, much research has been carried out for synthesizing the high quality diamond thin-films using microwave plasma enhanced chemical vapor deposition (MWPCVD) [13][14][15][16][17], radio frequency (RF), DC plasma CVD [18,19], electron cyclotron resonance (ECR) plasma CVD [20][21][22], the hot filament CVD [23,24], the ion beam deposition method (IBD) [25], laser ablation, combustion flame, etc [26][27][28]. Generally, the low pressure CVD processes for synthesis of diamond films have been used with the activating gas phase carbon-containing precursor of CH 4 .…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process

Han¹

2012

Journal of Electrical Engineering and Technology

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-The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and Hβ on Hα, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

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The role of hydrogen in a-C:H films deposited from hexane or acetylene using direct ion beam deposition method

Cited by 23 publications

References 20 publications

Kinetic modelling of a-C:H thin fllm chemical vapour deposition on Si substrate

Kinetic modelling of a-C:H thin fllm chemical vapour deposition on Si substrate

Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma-enhanced CVD system: the effect of processing parameters

Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process

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