The role of hydrogen in silicon wafer bonding: an infrared study

Weldon, M. K.; Chabal, Yves J.; Christman, S. B.; Bourcereau, J.; Goodwin, C.A.; Hsieh, C. M.; Nakahara, S.; Shanaman, R.H.; Easter, W.G.; Feldman, L. C.

doi:10.1109/soi.1995.526513

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Native Oxide Film Modification1

Impact On Water Diffusion1

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“…In figure 3, the Si-O-Si spectral range (1150-1250 cm -1 ) is reported for the standard cleaning preparation and for different pre-bonding thermal treatments. We can see that the pre-bonding thermal treatment induces a wavenumber shift of the Si-O-Si peak to the higher wavenumber i.e a shift to 1240 cm -1 thermal oxide film signature (7) in the case of 600°C and 700°C prebonding thermal treatments. The Si-O-Si peak is respectively at 1236 cm -1 and 1241 cm -1 whereas standard conditions and 400°C pre-bonding thermal treatment are respectively at 1214 cm -1 and 1211 cm -1 .…”

Section: Native Oxide Film Modificationmentioning

confidence: 86%

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Effect of Pre-bonding Thermal Treatment on the Bonding Interface Evolution in Direct Si-Si Hydrophilic Wafer Bonding

et al. 2008

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Section: Native Oxide Film Modificationmentioning

confidence: 86%

“…This wide O-H band can be split in two regions. The 3200-3500 cm -1 region is attributed to molecular water and the 3500-3700 cm -1 represents the hydroxyl groups (7).…”

Section: Impact On Water Diffusionmentioning

confidence: 99%