The role of implantation temperature and dose in the control of the microstructure of SIMOX structures

Reeson, K.J.; Robinson, A.K.; Hemment, P.L.F.; Marsh, C.D.; Christensen, Kenneth J.; Booker, G. R.; Chater, Richard J.; Kilner, John A.; Harbeke, G.; Steigmeir, E. F.; Celler, George K.

doi:10.1016/0167-9317(88)90015-9

Cited by 62 publications

(9 citation statements)

References 13 publications

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“…2 ) had any effect on the resulting morphology of the samples, implantation was undertaken using both singly charged O + at 200 kV and singly charged molecular O + 2 at twice the acceleration potential (400 kV), giving the same overall beam energy. From the results obtained there was no discernible difference between the samples; this accords with earlier measurements on oxygen-implanted silicon [11].…”

Section: Effects Of Implantation Conditionssupporting

confidence: 91%

“…A series of samples (see table 1) were then implanted with a dose of 1.4 × 10 18 O + cm −2 ± 10% at 200 keV at temperatures ranging from ∼170-600 • C. This dose was chosen because previous extensive studies on oxygen-implanted silicon [11] had shown that this was the optimum dose on which to observe the effects of implantation temperature on the morphology of the implanted region. In the case of the present study implantation was carried out at temperatures of 600 • C, (OX15); 400 • C (OX16); 205 • C (OX17) and 170 • C (OX28); in the case of the former two samples a heated sample stage was used to heat the sample to the desired temperature, while The probe beam was 1.5 MeV He + , equating to 2.958 keV/channel.…”

Section: Effects Of Implantation Temperaturementioning

confidence: 99%

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Formation of planar waveguides by implantation of O into cubic silicon carbide

Jackson¹,

Reed

Way

et al. 2001

J. Phys. D: Appl. Phys.

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This paper describes the formation of cubic silicon carbide planar waveguides which use a region implanted with high doses of oxygen as the guiding layer. The material used for these experiments is cubic silicon carbide grown on-axis on {001} CZ silicon substrates. Oxygen implants were either conducted at 200 kV for singly charged ions (O+) or 400 kV for molecular O2+ species. The results from the two types of implant are indistinguishable. To look at how the microstructure of the sample was influenced by implantation temperature a dose of 1.4×1018 cm-2 ±10% was implanted into samples at temperatures ranging from ≈170 °C to 600 °C. It was found that implanting below 200 °C gives an amorphous layer, while at 600 °C the damage is comparable with the quality of the original single crystal starting material. The upper oxide/surface interface also sharpens with increasing temperature. The dose dependence of the microstructure was also examined. Doses ranging from 1×1017 to 1.8×1018 O cm-2 were implanted while the wafer was maintained at 600 °C using a heated sample stage. At the lower doses ⩽8×1017 O cm-2 carbon and silicon self-interstitials are produced by the dissociation of the silicon carbide host lattice, in a manner analogous to that observed for silicon implanted silicon carbide. At higher doses, ⩾1.4×1018 O cm-2 chemical effects predominate and the growing SiO2 layer causes the migration of the excess silicon and carbon interstitials towards the interfaces of the synthesized region. Increasing the implanted dose beyond 1.4×1018 O cm-2 results in a significant increase in the level of damage in the surface region. The results also show that for doses of 1.4×1018 O cm-2 and greater, a layer of SiO2 is formed at the peak of the implanted distribution.

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Section: Effects Of Implantation Conditionssupporting

confidence: 91%

Section: Effects Of Implantation Temperaturementioning

confidence: 99%

Formation of planar waveguides by implantation of O into cubic silicon carbide

Jackson¹,

Reed

Way

et al. 2001

J. Phys. D: Appl. Phys.

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“…When dose above to 5.5_10 17 cm -2 , ribbon-like lamellae of silicon appears in this layer. The thickness of the fourth damage region near the bulk silicon interface is over 200nm, and this layer contains large defects lying along {311} silicon lattice planes but the oxygen concentration is low [4,5]. Compare to the annealed samples, this layer recovers to single silicon thoroughly after annealing.…”

Section: Methodsmentioning

confidence: 90%

The Study of the Formation of Thin SOI Structure by SIMOX with Water Plasma

Chen

Wang

et al. 2001

MRS Proc.

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The biggest drawback of the widely application of SIMOX-SOI material is the low yield and the high cost which mainly due to the long implantation time by conventional beamline implanter. An implanter without an ion mass analyzer is used to fabricate SOI materials by H 2 O + , HO + , and O + ions implantation using water plasma. Based on the consideration that the masses of the three ions of are quite close, their depth profiles in as-implanted wafers will not disperse much, which makes it possible for the formation of a single buried oxide layer by choosing the appropriate energy and dose. The results show that it exits a dose window at fixed implantation energy to form desirable thin or ultra-thin SOI structure with the buried oxide layer free of silicon islands. Compared to conventional SIMOX method, the sample implanted at the same dose and energy has thicker BOX layer. This probably caused by the heavy oxygen damaged region with hydrogen-induced defects in as-implanted wafer appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high-temperature annealing process.

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“…This dose was chosen because previous extensive studies on oxygen implanted silicon [8] had shown that this was the optimum dose on which to observe the effects of implantation temperature on the morphology of the implanted region. This dose was chosen because previous extensive studies on oxygen implanted silicon [8] had shown that this was the optimum dose on which to observe the effects of implantation temperature on the morphology of the implanted region.…”

Section: Low Energy Implant Resultsmentioning

confidence: 99%

Fabrication and evaluation of SiC optical modulators

et al. 2002

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Silicon Carbide is a potentially useful compound for use in silicon based photonics because cubic silicon carbide (3C-SiC), possesses a first order electro-optic (Pockels) effect, something absent in pure silicon. This means the material is potentially suitable for high speed optical modulation. Furthermore, the wide bandgap (2.2 eV) of 3C-SiC makes the devices suitable for use over the visible and near infrared spectrum range as well as the longer communication wavelengths, and also means the material can tolerate high temperatures. However, relatively little work has been carried out in SiC for photonics applications. In this paper we will discuss design and fabrication of both SiC waveguides and modulators for silicon based photonics. The fabrication process utilises ion implantation of oxygen into SiC to form the lower waveguide boundary. Subsequently, ribs are etched and contacts are added to form the optical modulators. Consideration of both Pockels modulators and plasma dispersion modulators has been made, and both will be discussed here. These devices have potential for optical modulation, but are also compatible with silicon processing technology.We have demonstrated waveguiding in 3C-SiC, established a processing recipe for the SiC wafers which enables fabrication of 3-dimensional devices, and demonstrated optical modulation. Performance of the resultant devices is compared to other silicon based devices in terms of operating speed and efficiency.Keywords: Si-based optoelectronics, silicon on insulator, SiC planar waveguides, SiC rib waveguides, modulators (DWDM). Since the linear electro-optic effect (Pockels effect) is not present in crystalline silicon due to the centrosymmetric crystal structure, active devices such as modulators and switches must be designed using the free carrier dispersion effect [1]. Furthermore, the transparent wavelength range of Si is limited to the region of above l.2jtm, and therefore applications in the visible wavelength range are excluded. There is a great demand for photonic integrated devices compatible with silicon technology and the use of silicon based alloys (SiGe, SiGeC, SiC) offer a solution for some applications.SiC has been considered for high-power and high-temperature devices because of its attractive electronic properties. The cubic polytype (3C or ) of the silicon carbide (SiC) has a wide bandgap (2.2eV), it is transparent in the range O.54-2tm and therefore suitable for waveguiding over the visible and near-infrared wavelength range as well as the longer communication wavelengths. f3-SiC is a crystal with a zincblende structure and possesses a 43m point-group lattice structure which is non-centrosymmetric. Hence the electro-optic effect is observable, and the electro-optic coefficient is more than 70% higher than that of GaAs [2]. Optical devices fabricated from fE-SiC can be operated in the visible range, *

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The role of implantation temperature and dose in the control of the microstructure of SIMOX structures

Cited by 62 publications

References 13 publications

Formation of planar waveguides by implantation of O into cubic silicon carbide

Formation of planar waveguides by implantation of O into cubic silicon carbide

The Study of the Formation of Thin SOI Structure by SIMOX with Water Plasma

Fabrication and evaluation of SiC optical modulators

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