The role of ions during stable impedance operation of the immersed-Bz diode at 4 to 5 MV

Abstract

The immersed-Bz diode is being developed as a high-brightness, flash x-ray radiography source at Sandia National Laboratories. This diode is a foil-less electron-beam diode with a long, thin, needlelike cathode that is inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces forward-directed bremsstrahlung. In addition, electron beam heating of the anode produces surface plasmas allowing ion emission. Two different operating regimes for this diode have been identified: a nominal operating regime where the total diode current is characterized as classically bipolar and an anomalous operating regime characterized by a dramatic impedance collapse where the total diode current greatly exceeds the bipolar limit. Data from a comprehensive series of experiments fielded at 4 and 5MV, where the diode operates in the nominal or stable impedance regime, with beam currents ranging from 20–40kA on target are presented. In this mode, both the measured diode current and experimental radiation production are consistent with physics based models including two-dimensional particle-in-cell simulations. The analysis indicates that intermediate mass ions (e.g., 12–18amu) control the nominal impedance evolution rather than expected lighter mass ions such as hydrogen.