CQD solutions processability and tunability of physical properties, but also leads to an increased surface area/volume ratio. [4] Consequently, CQDs suffer from high surface trap density, resulting in significantly reduced photovoltaic performance. [5,6] The surface passivation then becomes a critical step to reduce energy loss (e.g., open-circuit voltage [V oc ] loss) and realize high device performance. [7][8][9] Exploring efficient passivation strategies has always been the overarching theme throughout the history of CQD solar cells. [10] However, this issue has far from been solved. Up to now, the V oc loss in high-efficiency PbS CQD solar cells is mostly around 0.45 V, [11][12][13][14][15] which is significantly larger compared to the V oc loss of â0.35 V for silicon, gallium arsenide, and perovskite solar cells. [16][17][18] Among all the photovoltaic parameters, the low V oc is evidently the one limiting the device performance of current CQD solar cells. Therefore, it's most urgent to explore an innovative passivation strategy to further reduce V oc loss and realize the breakthrough of CQD photovoltaic performance.After synthesis, most CQD surface trap states are generated during the ligand-exchange process, in which the insulating oleate ligands are replaced with short ones to facilitateThe high open-circuit voltage (V oc ) loss arising from insufficient surface passivation is the main factor that limits the efficiency of current lead sulfide colloidal quantum dots (PbS CQDs) solar cell. Here, synergistic passivation is performed in the direct synthesis of conductive PbS CQD inks by introducing multifunctional ligands to well coordinate the complicated CQDs surface with the thermodynamically optimal configuration. The improved passivation effect is intactly delivered to the final photovoltaic device, leading to an order lower surface trap density and beneficial doping behavior compared to the control sample. The obtained CQD inks show the highest photoluminescence quantum yield (PLQY) of 24% for all photovoltaic PbS CQD inks, which is more than twice the reported average PLQY value of â10%. As a result, a high V oc of 0.71 V and power conversion efficiency (PCE) of 13.3% is achieved, which results in the lowest V oc loss (0.35 eV) for the reported PbS CQD solar cells with PCE >10%, comparable to that of perovskite solar cells. This work provides valuable insights into the future CQDs passivation strategies and also demonstrates the great potential for the direct-synthesis protocol of PbS CQDs.