The Role of Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

Abstract

PACS: 73.40.Qv; 85.40.Ry We investigate quantum mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.

Analysis of parasitic quantum effects in classical CMOS circuits

“…At the 0:12 mm technology node with oxide thicknesses below 3 nm the impact of direct tunnelling current starts to increase exponentially [2,3]. Consequently, for classical CMOS circuits we have to expect a dramatic increase of parasitic currents leading to unacceptable noise levels in analog applications [4] and may even cause a failure of the circuit functionality [5].…”