2010
DOI: 10.1088/0022-3727/43/13/135401
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The role of straining and morphology in thermal conductivity of a set of Si–Ge superlattices and biomimetic Si–Ge nanocomposites

Abstract: The ability to alter the thermal and mechanical properties of nanostructures by tailoring nanoscale morphology has led to vast activity in applications such as high figure of merit (ZT) thermoelectric, microelectronic and optoelectronic devices. Two types of nanostructures that have gained significant attention are Si–Ge superlattices and Si–Ge biomimetic nanocomposites, in which one phase is distributed in the other phase in a staggered biomimetic manner similar to biological materials. A systematic compariso… Show more

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Cited by 30 publications
(15 citation statements)
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References 47 publications
(75 reference statements)
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“…This leads to the increase of the thermal conductivity when applying compressive or tensile strain, which agrees with the observed trend in the variation of thermal conductivity of the nanocomposite with needle shaped HAP minerals as a function of strain [red curve Figure 9(c)]. In order to explain the variation of thermal conductivity with straining, we can rewrite equation (9) as (Bhowmick and Shenoy, 2006;Samvedi and Tomar, 2010).…”
Section: Influence Of Strainingsupporting
confidence: 82%
“…This leads to the increase of the thermal conductivity when applying compressive or tensile strain, which agrees with the observed trend in the variation of thermal conductivity of the nanocomposite with needle shaped HAP minerals as a function of strain [red curve Figure 9(c)]. In order to explain the variation of thermal conductivity with straining, we can rewrite equation (9) as (Bhowmick and Shenoy, 2006;Samvedi and Tomar, 2010).…”
Section: Influence Of Strainingsupporting
confidence: 82%
“…[12][13][14][15][16][17][18][19][20] All of the reported studies have focused on phonon mediated conductive thermal transport and have addressed electron-phonon correlation from classical point of view. This paper improves upon understanding gained from such earlier works by incorporating an all electron approach that explicitly addresses combined phonon and electron mediated conductive transport through a material interface as a function of strain and at a range of temperatures from 500 K to 2500 K.…”
Section: Introductionmentioning
confidence: 99%
“…According to Fig. Samvedi and Tomar [49] have earlier presented a model that accounts for biomimetic arrangement of interfaces in determining thermal conduc tivity of a set of Si-Ge biomimetic materials as a function of stress and temperature. Thermal transport occurs due to the migration of free electrons and lattice vibration waves.…”
Section: Discussionmentioning
confidence: 99%