The role of substrate on the growth of 2D heterostructures by CVD

Feijó, Tais Orestes; Copetti, Gabriela; Gerling, Ester Riedner Figini; Hanke, Michael; Lopes, J. M. J.; Radtke, C.; Soares, Gabriel Vieira

doi:10.1016/j.apsusc.2020.148226

Cited by 7 publications

(7 citation statements)

References 44 publications

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“…For example, H. K. Neupane et al 47 demonstrated that the vacancy defects at Mo sites could be used to efficiently tune the electronic and magnetic properties of 2D graphene/MoS 2 heterostructure. Vacancies also affects the mechanical, electrical and magnetic properties of MoS 2 48 . The existence of vacancies can be beneficial or detrimental to the performance of the heterostructure, depending on the location and density of the defects.…”

Section: Resultsmentioning

confidence: 99%

“…The actual application of 2D heterostructures normally cannot be separated from the substrate. The existence of substrate has demonstrated to greatly affect the growth and properties of 2D heterostructures 48 , 49 . To make clear the influence of substrate on the ion irradiation effects of the heterostructures, we plot the relationship between the number of sputtered atoms and irradiation energy for the supported and suspended cases in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Molecular dynamics simulations of ion beam irradiation on graphene/MoS2 heterostructure

Zhu

2021

Sci Rep

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The interaction between ion irradiation and two-dimensional (2D) heterostructures is important for the performance modulation and application realization, while few studies have been reported. This paper investigates the influence of Ar ion irradiation on graphene/MoS2 heterostructure by using molecular dynamics (MD) simulations. The generation of defects is studied at first by considering the influence factors (i.e., irradiation energy, dose, stacking order, and substrate). Then uniaxial tensile test simulations are conducted to uncover the evolution of the mechanical performance of graphene/MoS2 heterostructure after being irradiated by ions. At last, the control rule of interlayer distance in graphene/MoS2 heterostructure by ion irradiation is illustrated for the actual applications. This study could provide important guidance for future application in tuning the performance of graphene/MoS2 heterostructure-based devices by ion beam irradiation.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Molecular dynamics simulations of ion beam irradiation on graphene/MoS2 heterostructure

Zhu

2021

Sci Rep

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“…It is concluded that selecting a suitable substrate controls the nucleation density, and the single-crystalline substrate with the pretreated surface can promote the oriented and aligned growth of high uniformity TMDs. 59 Moreover, the growth of TMDs with high uniformity and large size can be obtained by modulation of the reaction system, e.g., process optimization, and system engineering. The production of high-quality and large domain size monolayer MoS 2 film on the sapphire wafers by multisource system design of LPCVD was reported.…”

Section: Low-pressure Cvdmentioning

confidence: 99%

“…MoS 2 (Figure f). It is concluded that selecting a suitable substrate controls the nucleation density, and the single-crystalline substrate with the pretreated surface can promote the oriented and aligned growth of high uniformity TMDs …”

Section: Controllable Cvd Growth Of Tmdsmentioning

confidence: 99%

Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics

et al. 2022

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In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.

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“…Epitaxial graphene (EG) on SiC offers a more stable substrate than SiO 2 for the growth of TMDs in particular at T > 850 °C. [35] Graphene provides an atomically sharp interface with MoS 2 for a uniform growth of high-quality crystals, however, wrinkles and defects on the surface of graphene cause formation of adlayers or nonuniform MoS 2 growth. [36,37] MoS 2 islands are reported to grow rotationally commensurate with respect to EG with initial nucleation on the step edges of graphene terraces.…”

Section: Introductionmentioning

confidence: 99%

2D MoS₂ Heterostructures on Epitaxial and Self‐Standing Graphene for Energy Storage: From Growth Mechanism to Application

Zebardastan

Bradford

Gupta

et al. 2021

Adv Materials Technologies

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Layered molybdenum disulphide (MoS2) crystals in combination with graphene create the opportunity for the development of heterostructures with tailored surface and structural properties for energy storage applications. Herein, 2D heterostructures are developed by growing MoS2 on epitaxial and self‐standing nanoporous graphene (NPG) using chemical vapor deposition (CVD). The effect of substrate as well as different CVD growth parameters such as temperature, amount of sulfur and MoO3 precursors, and argon flow on the growth of MoS2 is systematically investigated. Interestingly, various structures of MoS2 such as monolayer triangular islands, spirals, standing sheets, and irregular stacked multilayered MoS2 are successfully developed. The growth mechanism is proposed using different advanced characterization techniques. The formation of a continuous wetting layer with grain boundaries over the surface prior to formation of any other structures is detected. As a proof of principle, MoS2/NPG is employed for the first time as anode material in potassium ion battery. The electrode delivers a specific capacity of 389 mAh g−1 with over 98% stability after 200 cycles. The porous structures clearly facilitate the ion transport which is beneficial for the ion battery. These encouraging results open new opportunities to develop hierarchical heterostructures of 2D‐materials for next‐generation energy storage technologies.

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The role of substrate on the growth of 2D heterostructures by CVD

Cited by 7 publications

References 44 publications

Molecular dynamics simulations of ion beam irradiation on graphene/MoS2 heterostructure

Molecular dynamics simulations of ion beam irradiation on graphene/MoS2 heterostructure

Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics

2D MoS₂ Heterostructures on Epitaxial and Self‐Standing Graphene for Energy Storage: From Growth Mechanism to Application

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The role of substrate on the growth of 2D heterostructures by CVD

Cited by 7 publications

References 44 publications

Molecular dynamics simulations of ion beam irradiation on graphene/MoS2 heterostructure

Molecular dynamics simulations of ion beam irradiation on graphene/MoS2 heterostructure

Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics

2D MoS2 Heterostructures on Epitaxial and Self‐Standing Graphene for Energy Storage: From Growth Mechanism to Application

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2D MoS₂ Heterostructures on Epitaxial and Self‐Standing Graphene for Energy Storage: From Growth Mechanism to Application