The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

Daudin, B.; Siladie, Alexandra-Madalina; Gruart, Marion; Hertog, M. den; Bougerol, Catherine; Haas, Benedikt; Robin, Éric; Recio-Carretero, Maria-José; Garro, N.; Cros, A.

doi:10.1088/1361-6528/abc780

Cited by 14 publications

(13 citation statements)

References 89 publications

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“…The NWs' diameter is ∼45 nm at the bottom (GaN stems) and increases up to ∼90 nm at the top. The radial enlargement is caused by the limited diffusion of Al atoms along the sidewalls toward the top, 31 which increases the NW lateral growth rate and eventually leads to coalescence at the top. The combination of the high density of NWs (>100 NWs μm −2 ) with the radial enlargement instigates a high filling factor (>90%), fostering the coalescence phenomenon.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…More details about the growth mechanisms of similar structures can be found elsewhere. 30,31 Eu-implantation was performed at room temperature (RT) using 300 keV ions, in a configuration parallel to the NWs' growth axis (c-axis), as schematized in Figure 1B. Two Eu fluences were used: 1 × 10 14 cm −2 (sample "NW-1e14") and 5 × 10 14 cm −2 (sample "NW-5e14").…”

Section: ■ Experimental Methodsmentioning

confidence: 99%

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Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes

Cardoso

Correia

Vermeersch

et al. 2022

ACS Appl. Nano Mater.

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Europium (Eu)-implanted AlN nanowire (NW) p–n junctions, subjected to rapid thermal annealing at 1000 °C, were investigated in view of application as red light-emitting diodes (LEDs). In a first step, the structural and optical properties of NWs implanted with two different fluences (1 × 1014 cm–2 and 5 × 1014 cm–2) were studied. The luminescence of the trivalent Eu ions (Eu3+) was achieved for both samples using below and above AlN bandgap energy excitation. The excitation below the AlN bandgap occurs through two broad bands, A1 (peaked at ∼270 nm) and A2 (peaked at ∼367 nm), associated with lattice defects. In addition to Eu3+ luminescence, other radiative channels linked to deep-level defects were identified in photoluminescence (PL). The cathodoluminescence (CL) relative intensity ratio between intra-ionic and defect-related emissions increases compared to that of PL. In both PL and CL, the Eu3+ luminescence intensity increases about three times for the highest fluence, while the contribution from radiative recombination at defects decreases. This study also allowed to map an in-depth profile of the optically active Eu3+, revealing that it extends deeper than the range predicted by Monte Carlo simulations. Based on these findings, a proof-of-concept red LED is shown using the NWs implanted with the highest fluence. The devices exhibited the typical rectifying behavior of a p–n junction and an electroluminescence signal dominated by the 5D0 → 7F2 transition (∼624 nm) starting at a threshold voltage of 12 V. The demonstration of red LEDs based on Eu-implanted AlN NWs highlights the potential of such an approach for developing multi-color nano-emitters.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: ■ Experimental Methodsmentioning

confidence: 99%

Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes

Cardoso

Correia

Vermeersch

et al. 2022

ACS Appl. Nano Mater.

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“…The clear boundaries between the Qdisks and the barriers indicated the fine uniformity of the Al composition. Figure 3 d shows that there were bulges at the edges of the quantum disks, which were the result of a kinetic process during the nanorod growth procedure [ 34 ].…”

Section: Resultsmentioning

confidence: 99%

AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy

et al. 2022

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AlGaN nanorods have attracted increasing amounts of attention for use in ultraviolet (UV) optoelectronic devices. Here, self-assembled AlGaN nanorods with embedding quantum disks (Qdisks) were grown on Si(111) using plasma-assisted molecular beam epitaxy (PA-MBE). The morphology and quantum construction of the nanorods were investigated and well-oriented and nearly defect-free nanorods were shown to have a high density of about 2 × 1010 cm−2. By controlling the substrate temperature and Al/Ga ratio, the emission wavelengths of the nanorods could be adjusted from 276 nm to 330 nm. By optimizing the structures and growth parameters of the Qdisks, a high internal quantum efficiency (IQE) of the AlGaN Qdisk nanorods of up to 77% was obtained at 305 nm, which also exhibited a shift in the small emission wavelength peak with respect to the increasing temperatures during the PL measurements.

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“…The nanowires are typically formed through a spontaneous process under N-rich conditions and are generally N-polar. [142][143][144][145][146][147][148][149] In recent years, PAMBE has emerged as a tool to grow device-quality AlGaN nanowires (including AlN nanowires). [18][19][20][21][22] Compared with their planar counterparts, AlGaN nanowires possess a number of advantages.…”

Section: Algan Nanowires Grown By Pambementioning

confidence: 99%

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Zhang

Yin

Zhao

2021

Physica Rapid Research Ltrs

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Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its direct, tunable, and ultrawide bandgap energies (3.4-6.2 eV). The progress, nonetheless, has been remained slow, which is ascribed to a few major challenges, including large dislocation and defect densities, difficulty in obtaining p-type high-Al-content AlGaN layers with a sufficient p-type conduction, the large electric polarization fields, and the unfavorable optical polarization. In recent years, with AlGaN alloys grown by molecular beam epitaxy (MBE), including both thin films and nanowire structures, remarkable advancements have been made, such as highly conductive p-type high-Al-content AlGaN epilayers with resistivities as low as 0.7 Ω cm and DUV lasing down to 239 nm with nanowire structures under a direct current injection. Herein, the recent progress on the DUV lasers by the MBE-grown AlGaN is reviewed. The challenges and prospects of the MBE-grown AlGaN for DUV lasers are also discussed.

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The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

Cited by 14 publications

References 89 publications

Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes

Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes

AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

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