The role of the device surface in the high voltage behaviour of the GaAs MESFET

Barton, T.M.; Ladbrooke, P.H.

doi:10.1016/0038-1101(86)90183-8

Cited by 73 publications

(14 citation statements)

References 13 publications

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“…The RF dispersion originates from surface states [11], [18]. In the presence of dispersion, the surface traps are negatively charged at pinchoff, therefore, the effective gate length increases and the electrical field under the gate on the drain side is much reduced.…”

Section: Discussionmentioning

confidence: 99%

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Xing

Dora

Chini

et al. 2004

IEEE Electron Device Lett.

326

141

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Abstract-High-voltage Al 0 22 Ga 0 78 N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.Index Terms-Breakdown voltage, field-effect transistors (FETs), field plates, high-electron mobility transistors (HEMTs), passivation, power electronics.

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Section: Discussionmentioning

confidence: 99%

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Xing

Dora

Chini

et al. 2004

IEEE Electron Device Lett.

326

141

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“…Namely, I GD in FETs was known to be decreased with the increase of negative charge in surface states near the drain end of the gate. 11 Negative charges in surface states play a role in reducing the electric field strength at the drain end of the gate, leading to the decrease of I GD . Since the decrease of donor-type surface states and the increase of acceptor-type ones mean the increase of net negative charge, I GD was decreased by the treatment.…”

Section: Resultsmentioning

confidence: 99%

Effects of photowashing treatment on electrical properties of a GaAs metal–semiconductor field-effect transistor

Choi

Lee

Mun

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Phosphidization of GaAs by a remote phosphine plasma process and its application to surface passivation of GaAs metal-semiconductor field-effect transistors Appl. Phys. Lett. 74, 2999Lett. 74, (1999 Effects of photowashing treatment on electrical properties of GaAs metal-semiconductor field-effect transistors ͑MESFETs͒ were investigated using x-ray photoemission spectroscopy. The binding energy of the Ga-As bond shifted toward lower binding energies and the ratio of Ga/As was increased, namely the formation of the Ga-rich surface. This suggests that acceptor-type defects Ga As Ϫ were produced by the photowashing treatment and the level for Fermi energy pinning at the surface moved to acceptor states. The Fermi energy pinning caused by Ga As Ϫ results in an increase of the depletion layer width at the ungated region of the MESFET via the increase of band bending from the surface. Therefore the drain current density at a positive gate bias and the leakage current at gate-to-drain were simultaneously reduced.

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“…5 The effect of surface states on the breakdown voltage and transient drain current has been considered by several authors. 7,8 According to Barton and Ladbrooke,8 surface states capture charges and increase the breakdown voltage. This effect is argued by Huang et al 7 to be responsible for degradation of transient drain current.…”

Section: B Rf Performancementioning

confidence: 99%

Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

Hussain

Chu

Wen

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report the effect of start epi-material variability on the performance of double-recessed power pseudomorphic high electron mobility transistors. Variation in channel-recess depth, which is related to variation in the start material, is critically linked to rf performance of monolithic microwave and millimeter wave integrated circuit high power amplifiers. For high yield, it is important to control the channel recess, which in turn has implications on acceptable variation in epi-material. Design tweaks can relax channel-recess tolerance limits, but it is still important to account for material variation.

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The role of the device surface in the high voltage behaviour of the GaAs MESFET

Cited by 73 publications

References 13 publications

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Effects of photowashing treatment on electrical properties of a GaAs metal–semiconductor field-effect transistor

Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

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