The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations

Abbaspour, Elhameh; Menzel, Stephan; Jungemann, C.

doi:10.1109/sispad.2015.7292317

Cited by 11 publications

(10 citation statements)

References 14 publications

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“…But there are also different possibilities to create oxygen vacancies in the oxide like, for example, extraction of oxygen via one of the electrodes. [24][25][26] To prove our assumption, the layer stack is modified by a 10 nm thick TiN layer between the hafnium oxide and the top platinum electrode. Furthermore, the thickness of the hafnium oxide is reduced to 15 nm.…”

mentioning

confidence: 90%

“…During this electroforming step, the oxide thin film is reduced by extraction of oxygen via one of the electrodes, and an oxygen-deficient filament is formed. [24][25][26] Alternatively, a sub-stoichiometric oxide layer can be deposited in order to achieve forming-free switching behavior. 27 In this letter, we report our results on wake-up investigations of CSD prepared yttrium doped hafnium oxide.…”

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confidence: 99%

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Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

Starschich

Menzel

Böttger

2016

Applied Physics Letters

249

158

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The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the amount of cycles but the duration of the applied electrical field is essential for the wake-up. Temperature dependent wake-up cycling in a range of −160 °C to 100 °C reveals a strong temperature activation of the wake-up, which can be attributed to ion rearrangement during cycling. By using asymmetrical electrodes, resistive valence change mechanism switching can be observed coincident with ferroelectric switching. From the given results, it can be concluded that redistribution of oxygen vacancies is the origin of the wake-up effect.

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mentioning

confidence: 90%

mentioning

confidence: 99%

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

Starschich

Menzel

Böttger

2016

Applied Physics Letters

249

158

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“…[17] As a matter of fact, the variability of RRAM switching is intrinsic to its operation principle: indeed, the most mature class of RRAM devices is the one that bases its operation on the inherent stochastic processes of formation and disruption of nanometric filamentary regions where metallic ions or defects, which locally reduce the stoichiometry of the insulating layer, activate the electric conduction from one electrode to the opposite. [18][19][20][21][22][23] As the filament dimensions shrinks, according to both device and power scaling requirements, [24,25] variability raises as a consequence. For this reason, applications basing their functionality on device variability are becoming more and more appealing for future high performance and low power computation schemes [14,26] and compact models capturing the operation variability of RRAM devices are gaining importance.…”

Section: Introductionmentioning

confidence: 99%

“…In general, indeed, Monte Carlo simulations that take into account defect generation, diffusion and recombination possibly in combination with complex conduction mechanisms, like the multi-phonon trap assisted tunnelling, reveiled very powerful in describing physical mechanisms of RRAM switching. [18,19,35,36] The novelty of the present work is to show a model based on the solution of RCB networks explaining bipolar resistance switching and which does not require neither the assumption of interface layers with different properties with respect to the bulk of the insulating layer, nor the treatment of complex conduction mechanisms and of ionic drift and diffusion. The simplicity of the simulation allows a low computational load for each device simulation, which is not possible for complex physical phenomenological models that have been developed for describing the switching mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Stochastic circuit breaker network model for bipolar resistance switching memories

Brivio¹,

Spiga²

2017

J Comput Electron

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We present a stochastic model for resistance switching devices in which a square grid of resistor breakers plays the role of the insulator switching layer. The probability of breaker switching between two fixed resistance values, R OF F and R ON , is determined by the corresponding voltage drop and thermal Joule heating. The breaker switching produces the overall device resistance change. Salient features of all the switching operations of bipolar resistance switching memories (RRAMs) are reproduced by the model and compared to a prototypical HfO 2-based RRAM device. In particular, the need of a forming process that leads a fresh highly insulating device to a low resistance state (LRS) is captured by the model. Moreover, the model is able to reproduce the RESET process, which partially restores the insulating state through a gradual resistance transition as a function of the applied voltage and the abrupt nature of the SET process that restores the LRS. Furthermore, the multilevel capacity of a typical RRAM device obtained by tuning RESET voltage and SET compliance current is reproduced. The manuscript analyses the peculiar ingredients of the model and their influence on the simulated current-voltage curves and, in addition, provides a detailed description of the mechanisms that connect the switching of the single breakers and that of the overall device.

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“…This assumption has been tested by an extended version of the model presented in [8] towards the defect formation. The formation of point defects is included using the rate equation (1), see [15,16]. The simulation result changes then with a variable number of defects within the electrolyte, cf.…”

Section: Long Time Scale Investigationmentioning

confidence: 99%

An enhanced lumped element electrical model of a double barrier memristive device

Solan

Dirkmann

Hansen

et al. 2017

J. Phys. D: Appl. Phys.

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The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems -nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile.Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters.Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.

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The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations

Cited by 11 publications

References 14 publications

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

Stochastic circuit breaker network model for bipolar resistance switching memories

An enhanced lumped element electrical model of a double barrier memristive device

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