2011
DOI: 10.1186/1556-276x-6-135
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The role of the surfaces in the photon absorption in Ge nanoclusters embedded in silica

Abstract: The usage of semiconductor nanostructures is highly promising for boosting the energy conversion efficiency in photovoltaics technology, but still some of the underlying mechanisms are not well understood at the nanoscale length. Ge quantum dots (QDs) should have a larger absorption and a more efficient quantum confinement effect than Si ones, thus they are good candidate for third-generation solar cells. In this work, Ge QDs embedded in silica matrix have been synthesized through magnetron sputtering depositi… Show more

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Cited by 54 publications
(47 citation statements)
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“…6,11 However, the optical behavior and the band-gap tuning of Ge QDs does not depend on QD size only, as a basic confinement effect rule predicts. Other effects have been demonstrated to have a strong role in the light absorption/emission process such as: mid-gap states and defects at the interface with the matrix, [12][13][14] crystallinity (amorphous (a-) or crystalline (c-)) of QDs, 15 the shape of the QDs and their size distribution, 16,17 as well as the nature of the surrounding matrix. 18 However, one of the main problems with quantum dots embedded in dielectrics is the poor extraction of photo-generated carriers.…”
Section: Introductionmentioning
confidence: 99%
“…6,11 However, the optical behavior and the band-gap tuning of Ge QDs does not depend on QD size only, as a basic confinement effect rule predicts. Other effects have been demonstrated to have a strong role in the light absorption/emission process such as: mid-gap states and defects at the interface with the matrix, [12][13][14] crystallinity (amorphous (a-) or crystalline (c-)) of QDs, 15 the shape of the QDs and their size distribution, 16,17 as well as the nature of the surrounding matrix. 18 However, one of the main problems with quantum dots embedded in dielectrics is the poor extraction of photo-generated carriers.…”
Section: Introductionmentioning
confidence: 99%
“…If embedded in SiO 2 , Ge QDs synthesized by magnetron sputtering are shown to have an E opt g (1.6 eV) larger than bulk Ge, 8 with the light absorption process affected by interface states, which pin the bandgap at that value. 8 A great role of the embedding matrix is expected.…”
mentioning
confidence: 98%
“…3,4 Ge QDs gained a renewed scientific interest over Si QDs, thanks to lower fabrication temperatures, higher absorption coefficient, and larger exciton Bohr radius ($24 nm). [5][6][7][8][9][10] Actually, Ge QDs embedded in SiO 2 have been already used in high-efficiency light detection devices, 11 showing also good tunneling features in resonant tunneling diodes. 12 Even if Ge QDs seem promising candidates as light harvesters, the photon absorption mechanism needs to be further exploited, especially for what concerns the embedding matrix.…”
mentioning
confidence: 99%
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