2014
DOI: 10.1039/c3tc31713g
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The role of tin oxide surface defects in determining nanonet FET response to humidity and photoexcitation

Abstract: There has been a growing interest in 1-D metal oxide semiconducting nanostructures due to their stable chemical properties and potential applications in large-area, low-cost and flexible substrates. In this current work, we used field effect transistors (FETs) built on sub-millimetre scale metal oxide nanonet to characterize the nanowire surface properties. Two variations of SnO 2 nanowires, denoted as 0% O 2 and 0.5% O 2 -Ar, were grown by changing the O 2 concentration in the growth atmosphere. HR-TEM images… Show more

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Cited by 24 publications
(8 citation statements)
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“…The defect states produced near the Fermi level, called deep level defect states, can trap the charge carriers. This can significantly affect the amount of current in the resistive sensor at the high humidity level …”
Section: Resultsmentioning
confidence: 99%
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“…The defect states produced near the Fermi level, called deep level defect states, can trap the charge carriers. This can significantly affect the amount of current in the resistive sensor at the high humidity level …”
Section: Resultsmentioning
confidence: 99%
“…This can significantly affect the amount of current in the resistive sensor at the high humidity level. 7 By knowing the excellent humidity responsiveness, the SnSe 2 /MWCNT nanohybrid-based humidity sensor was exploited for its application in the touchless positioning interface and real time monitoring of human respiration. Figure 4(d) shows that the current can be changed upto 63% on approaching the fingertip toward the sensor to a distance of 3 mm.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
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“…[1][2][3][4][5] Among them, tin oxide (SnO 2 ) is extremely promising as an intrinsic n-type oxide semiconductor with good chemical and mechanical stability, 6 a wide bandgap of 3.6 eV at 300 K, 6 a highly achievable carrier concentration up to 6 Â 10 20 per cm 3 , 7 and an exciton-binding energy of 130 meV larger than those of ZnO (60 meV) and GaN (25 meV). 8,9 SnO 2 nanostructures have shown potential use in sensors, 10,11 transistors, [12][13][14] light-emitting diodes, 15,16 photovoltaic cells, 17 photocatalysis 18 and lithium batteries. [19][20][21] However, the even-parity symmetry of the conduction-band minimum and valence-band maximum states in SnO 2 prohibits the band-edge radiative transition and light emission, 22 which hinders their further application in optoelectronic devices, such as ultraviolet (UV) light emitters.…”
Section: Introductionmentioning
confidence: 99%
“…Humidity sensors are important to many applications, including human life and industrial/medical/ecological monitoring, and they are generally made from metal oxides, polymers, ceramics, carbon nanomaterials, and their composites 90. Different transduction techniques are employed to develop humidity sensors, such as capacitive,91 resistive,92 optical fiber,93 field effect transistor (FET),94 surface acoustic wave (SAW),95 and quartz crystal microbalance (QCM) 96. Sensitivity is critical for humidity sensors, and various sensing materials including carbon nanomaterials, nanosized metal oxides, and metal nanowires have been studied to construct humidity sensors; and these nanostructured materials are believed to enhance the sensitivity of humidity sensors due to their large surface‐to‐volume ratio and special properties resulting from nanoscale size 90a,97.…”
Section: D Nanocellulose‐based Products For Sensor Designmentioning
confidence: 99%