The role of various etching time in Si nanostructures for ultra-high sensitivity photodetector

Alber, Anita S.; Mutlak, Falah A.-H.

doi:10.1016/j.ijleo.2022.169427

Cited by 17 publications

(1 citation statement)

References 25 publications

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“…Since most current integrated circuits are manufactured on Si substrates, one of the proposed solutions is to combine the sophisticated microelectronics with optoelectronics technologies to achieve Si-based single-chip photoelectric integration circuits with photons as information carriers. Many other processes in Si-based monolithic optoelectronic integration are more mature [ 1 , 2 , 3 , 4 , 5 ], and the greatest limitation is the lack of suitable light sources.…”

Section: Introductionmentioning

confidence: 99%

Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range

Zhang

Lyu

et al. 2023

Nanomaterials

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In recent years, researchers have placed great importance on the use of silicon (Si)-related materials as efficient light sources for the purpose of realizing Si-based monolithic optoelectronic integration. Previous works were mostly focused on Si nanostructured materials, and, so far, exciting results from Si-based compounds are still lacking. In this paper, we have systematically demonstrated the high photoluminescence external quantum efficiency (PL EQE) and internal quantum efficiency (PL IQE) of amorphous silicon oxynitride (a-SiNxOy) systems. Within an integration sphere, we directly measured the PL EQE values of a-SiNxOy, which ranged from approximately 2% to 10% in the visible range at room temperature. Then, we calculated the related PL IQE through temperature-dependent PL measurements. The obtained PL IQE values (~84% at 480 nm emission peak wavelength) were very high compared with those of reported Si-based luminescent thin films. We also calculated the temperature-dependent PL EQE values of a-SiNxOy systems, and discussed the related PL mechanisms.

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Section: Introductionmentioning

confidence: 99%

Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range

Zhang

Lyu

et al. 2023

Nanomaterials

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High-performance photodetector of Au–MgO/PS nanostructure manufactured via pulsed laser ablation technique

2022

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This work focuses on photodetector Au:MgO nano-particles (NPs) have been prepared by laser ablation at various laser energies then deposited on porous-Si (PS). PS are produced with the use of the photoelectrochemical etching (PECE) approach for n-type crystalline Si (c-Si) wafers of (100) orientation. XRD, scanning electron Microscope (SEM), UV-visible Spector-photometer and electrical characteristics that have been utilized for characterizations of products. The photo-detector measurements, the spectral responsivity curves inclusive three regions; the rst peak was due to absorption of the ultraviolet light by Au:MgO NPs. The second peak corresponding to the absorption of the visible light with porous silicon layer and the third peak to absorption edge of the Si substrate. The higher responsivity of Au:MgO NPs/PS photo-detector were found to be 3.29 A/W for specimen prepared at laser energy 800 mJ/pulse.

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Enhancing response characteristics of palladium-doped vanadium pentoxide on a porous silicon substrate as gas sensor synthesized by pulsed laser deposition

Abed,

Mutlak

2023

Opt Quant Electron

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The role of various etching time in Si nanostructures for ultra-high sensitivity photodetector

Cited by 17 publications

References 25 publications

Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range

Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range

High-performance photodetector of Au–MgO/PS nanostructure manufactured via pulsed laser ablation technique

Enhancing response characteristics of palladium-doped vanadium pentoxide on a porous silicon substrate as gas sensor synthesized by pulsed laser deposition

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