The Semiconductor Strain Gage—a New Tool for Experimental Stress Analysis

Sanchez, J.C.

doi:10.1016/b978-0-08-013346-1.50018-5

Cited by 1 publication

(2 citation statements)

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“…Silicon strain-gauge, metal-diaphragm sensors were first introduced commercially in 1958 [15]. In these early sensors high-cost, low-volume biomedical [16,17] and aerospace [17] applications were targeted. This trend continued into the 1970s [18][19][20][21][22] when microsensor companies began to move toward higher-volume, lowercost applications [23], specifically, the automotive industry [22].…”

Section: Piezoresistive Sensorsmentioning

confidence: 99%

“…The evolution of piezoresistive pressure sensor technology is illustrated in figure 3, starting with metaldiaphragm sensors with bonded silicon strain gauges (figure 3(a)). The strain gauges were bonded by epoxies, phenolics, or eutectics [17]. These first designs had low yield and poor stability due to such factors as thermal mismatch with the metal-epoxy-silicon interface [15].…”

Section: Piezoresistive Sensorsmentioning

confidence: 99%

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Micromachined pressure sensors: review and recent developments

Eaton

Smith

1997

Smart Mater. Struct.

510

242

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Since the discovery of piezoresistivity in silicon in the mid 195Os, silicon-based pressure QsS;i%vI been widely produced. Micromachining technology has greatly benefited from the success of the integrated circuits industry, borrowing materials, processes, and toolsets. Because of this, microelectromechanical ystems (MEMS) are now poised to capture large segments of existing sensor markets and to catalyze the development of new markets.Given the emerging importance of MEMS, it is instructive to review the history of micromachined pressure sensors, and to examine new developments in the field. Pressure sensors will be the focus of this paper, starting from metal diaphragm sensors with bonded silicon strain gauges, and moving to present developments of surfacemicromachined, optical, resonant, and smart pressure sensors. Considerations for diaphragm design will be discussed in detail, as well as additional considerations for capacitive and piezor esistive devices.

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