The significance of ion implantation induced stress in silicon

Williams, J. S.

doi:10.1016/0375-9601(77)90116-5

Cited by 23 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

mentioning

confidence: 99%

“…Therefore, the controlled alignment of strain orientation and magnitude with the device architecture is crucial. This is particularly critical when strain in the nanostructures is introduced by device processing, for example, by patterning, 8 coating, 9 ion implantation 10 and/or annealing. 11 The characterization of nanostructures with highly inhomogeneous strain requires methods with high spatial resolution and strain sensitivity.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Power-Dependent Raman Analysis of Highly Strained Si Nanobridges

et al. 2014

View full text Add to dashboard Cite

Strain analysis of complex three-dimensional nanobridges conducted via Raman spectroscopy requires careful experimentation and data analysis supported by simulations. A method combining micro-Raman spectroscopy with finite element analysis is presented, enabling a detailed understanding of strain-sensitive Raman data measured on Si nanobridges. Power-dependent measurements are required to account for the a priori unknown scattering efficiency related to size and geometry. The experimental data is used to assess the validity of previously published phonon deformation potentials.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Power-Dependent Raman Analysis of Highly Strained Si Nanobridges

et al. 2014

View full text Add to dashboard Cite

show abstract

“…An alternative solution to tackle these limitations consists of locally transforming nitride tensile CESLs into compressive ones by ion implantation. In the last decade, different approaches were developed to alter the stress in dielectric layers via ion bombardment or plasma treatment (6)(7)(8). To strengthen those stress modifications, some of them require a combination of ion implantation and anneal steps at rather high temperature (above 600°C), which is problematic due to the buried silicide in the stack (see Fig.…”

Section: Introductionmentioning

confidence: 99%

Strain Modification of PECVD Nitride By Plasma Immersion Ion Implantation Processes

Lachal¹,

Plantier²,

Torregrosa³

et al. 2020

ECS Trans.

View full text Add to dashboard Cite

The impact of Plasma Immersion Ion Implantation (PIII) processes with various species (hydrogen, helium and nitrogen) on the stress of a tensile PECVD nitride film was evaluated. Ellipsometry measurements indicated no consumption of the nitride but a change in the optical index, signaling a material modification. The initial stress of the nitride was modified by PIII from tensile to mechanically neutral and even compressive. Hydrogen and nitrogen appeared to be more efficient to modify the stress than helium.

show abstract