The Simulation of MOS Integrated Circuits Using SPICE2

Abstract

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Effective parameter extraction using multiple-objective function for VLSI circuits

“…The weight W~DS that is assigned to the output conductance error can be specified by the user. MOS Level-2 parameters [18] were extracted from experimental data of two NMOS transistors, of geometries W/L = 2/~rrdl.5/~m and 3/zm/1.5 #m. The errors that were obtained from different runs of SUXES are listed in Table 1. These include using the singleobjective function given in (1), as well as the multipleobjective function given in (2) with different values of the weight W~os.…”

“…The simulated annealing procedure has then been completed and the results of the parameter extraction are printed. Figure 9 shows the drain current error against the number of iterations in the simulated annealing procedure applied to the extraction of MOS Level-3 parameters [18]. Measured drain current data from an NMOS transistor with W/L = 3.5 #m/1/an were used for this extraction.…”

Explicit geometry dependence of MOS transistor parameters by the pseudoboundary method

“…Table 1 lists a comparison of the SPICE level-2 MOS transistor model [19] and the level-4 (BSIM) model [14]. The BSIM model uses a convenient framework to obtain accurate MOS transistor characteristics for small-geometry transistors.…”

The compact d.c. electrothermal model of power MOSFETs for SPICE

“…Unfortunately, SPICE built-in MOSFET models of the various accuracy (Levels) [10][11][12][13][14] formulated for low power devices are the isothermal ones. That means that self-heating is not included in these models.…”