1982
DOI: 10.1016/0304-3991(82)90263-7
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The single-scattering model and spatial resolution in X-ray analysis of thin foils

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Cited by 95 publications
(47 citation statements)
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“…In systems with a field emission gun~FEG!, there is enough current in a 2-nm beam to allow successful analysis of exceedingly thin specimens with 2-5-nm spatial resolution~Lyman, 1986; Williams et al, 2002!. However, for all AEMs, beam broadening in thicker specimens~Gold-stein et al, 1977Reed, 1982! will degrade the X-ray spatial resolution up to several times the beam size.…”
Section: Electron-beam Instrumentsmentioning
confidence: 99%
“…In systems with a field emission gun~FEG!, there is enough current in a 2-nm beam to allow successful analysis of exceedingly thin specimens with 2-5-nm spatial resolution~Lyman, 1986; Williams et al, 2002!. However, for all AEMs, beam broadening in thicker specimens~Gold-stein et al, 1977Reed, 1982! will degrade the X-ray spatial resolution up to several times the beam size.…”
Section: Electron-beam Instrumentsmentioning
confidence: 99%
“…One of the most popular approaches to define the spatial resolution is to use the diameter at the midpoint of the truncated cone defined by the incident and exit beam diameters (Michael et al, 1990;Williams et al, 1992). This approach employs a single-scattering model (Goldstein et al, 1977;Reed, 1982) to describe the beam broadening and gives good agreement between experimental and simulated results (Williams et al, 1992), in spite of neglecting the electron intensity distribution in the incident beam or in the interaction volume. Recently, Keast & Williams (2000) evaluated various beam-broadening models by fitting to segregation profiles across grain boundaries and concluded that the Gaussian beam-broadening model (Doig et al, 1980;Doig & Flewitt, 1982) is the best description of the interaction volume.…”
Section: Determination Of Spatial Resolutionmentioning
confidence: 99%
“…13 ͑Note that the islands studied here are dislocated.͒ From point A upwards, the Si/Ge ratio remains approximately constant. ͑This variation is not due to the beam broadening, as, using equations given by Reed 14 and the atomic parameters of Ge and Si, 15 a 100 keV electron beam with a 1 nm electron probe size gives a spatial resolution for EDX of better than 2 nm for foils of thickness less than 20 nm.͒ This constant ratio is not seen in the results of Chaparro et al 13 Detailed EDX analysis shows that, throughout the whole island, there is a tendency for the Si/Ge ratio to be higher closer to the substrate. This can be accounted for by the larger atoms ͑Ge͒ tending to be in the tensile regions and the smaller atoms ͑Si͒ to be in the compressive regions, to minimize the strain energy.…”
Section: © 2000 American Institute Of Physics ͓S0003-6951͑00͒05235-9͔mentioning
confidence: 99%