The small signal a.c. impedance of gallium arsenide and silicon p-i-n diodes

Caverly, Robert H.; Hiller, G.

doi:10.1016/0038-1101(90)90028-d

Cited by 29 publications

(13 citation statements)

References 8 publications

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“…These additional terms improve the accuracy of the total diode impedance, especially in the case of thin p-i-n diodes. In the previous work described in [3], these terms were not taken into account. The carrier density is defined as the sum of dc and ac charge density components (4) Assuming a small signal approach for all quantities, dc and ac carrier distributions in the base are, respectively, given by…”

Section: Model Descriptionmentioning

confidence: 99%

“…In order to extend the validity domain of the standard numerical model [3] to any kind of p-i-n diodes, it becomes necessary to take into account all of these recombination currents. The base impedance and the two junction impedances are calculated from the carrier distribution in the I-region.…”

Section: Model Descriptionmentioning

confidence: 99%

“…In this case, the overall diode impedance is dominated by resistive and reactive effects introduced by the two junctions. The I-region acts like an electrical short circuit at very low frequencies [3]. At higher frequencies, the ac injected charge is concentrated only near the junctions.…”

mentioning

confidence: 99%

“…An accurate small signal numerical model based on geometrical and physical parameters (electron and hole mobilities, carrier lifetime and I-region thickness) has been developed to determine the diode impedance-frequency characteristics of the forward bias p-i-n diode [3]. The Caverly standard model [3] only supposes a recombination current in the I-region. This assumption is valid for most cases, especially for diodes with thick I-region.…”

mentioning

confidence: 99%

“…The diode impedance, according to physics based equations, depends on the diode geometry and semiconductor properties [4]. An accurate small signal numerical model based on geometrical and physical parameters (electron and hole mobilities, carrier lifetime and I-region thickness) has been developed to determine the diode impedance-frequency characteristics of the forward bias p-i-n diode [3]. The Caverly standard model [3] only supposes a recombination current in the I-region.…”

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confidence: 99%

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An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

Gatard¹,

Sommet²,

Bouysse³

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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Abstract-An improved formulation of the frequency-dependent impedance for p-i-n diodes from physical and geometrical parameters is presented. This work is addressed to diode designers and allows them to evaluate quickly and accurately the diode impedance. It comes in parallel with existing SPICE p-i-n diode model [1] used in CAD software. Under forward bias conditions, important recombinations occur in the heavily doped end regions of thin p-i-n diodes that seriously affects the diode impedance. This effect is taken into account to increase the accuracy of existing numerical models and to extend their validity domain to any I-region thicknesses. This improvement has been validated by measurement results on a 5-m I-region width silicon p-i-n diode.Index Terms-Bias-dependent impedance, carrier lifetime, forward bias, p-i-n diode, recombinations.

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Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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