The Software Package for Modeling and Optimizing the Electrical Characteristics of Non-Linear Frequency Converters of Radio Signals Based on Resonant Tunneling Diodes

Cherkasov, Kirill V.; Мешков, С. А.; Makeev, Mstislav

doi:10.1109/rusautocon49822.2020.9208210

Cited by 8 publications

(3 citation statements)

References 13 publications

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“…In this paper, the problem is solved using the example of resonant tunneling AlGaAs NHS [19][20][21][22]. The basic idea of developing a compact model is that a system of integral and differential equations of the verification basis, can be transformed into algebraic and transcendental ones by linearization and decomposition.…”

Section: Methodsmentioning

confidence: 99%

Architecture of composite multilayer semiconductor nanostructures

Vetrova,

Kuimov,

Meshkov

et al. 2023

E3S Web of Conf.

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Section: Methodsmentioning

confidence: 99%

Architecture of composite multilayer semiconductor nanostructures

Vetrova,

Kuimov,

Meshkov

et al. 2023

E3S Web of Conf.

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“…These modules' internal structure and main algorithms are described in details in [14,15]. In this paper our main interest is NERA module, or, more precisely, its part responsible for simulating nonlinear element's (in this case, a RTD) electrical parameters.…”

Section: Research Techniquesmentioning

confidence: 99%

“…Input parameters for simulating the nonlinear element's I-V characteristic are: simulated I-V characteristic of the element's RTHS (as "current-voltage" pairs), OCs' contact resistivity and space, NCAs' thickness, doping and cross-section space. Simulation algorithms and mathematical models used to simulate RTDs' electrical parameters are described in [14,15].…”

Section: Research Techniquesmentioning

confidence: 99%

Spacer layers’ thickness impact on the resonant-tunneling diode’s and frequency mixer’s operational parameters

Cherkasov,

Meshkov,

Makeev

2024

E3S Web Conf.

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The impact of spacer layers’ thickness on the resonant-tunneling diode’s (RTD) current-voltage characteristic and operational parameters of the RTD-based subharmonic mixer was studied during the described research using the software package developed by authors to simulate the RTD’s functional parameters while mixer’s parameters were simulated using existing microelectronic CAD. The research has revealed that the main impact on both RTD’s I-V characteristic’s shape and operational parameters of the studied subharmonic mixers is made by the emitter spacer layer’s thickness while the collector spacer’s thickness’ variation is insignificant in both cases. Such, it is shown that by varying the emitter spacer’s thickness from a single monolayer to twice its nominal value it’s possible to alter the RTD’s peak current from 0,28 to 1,92 of its nominal value. spacer layer’s thickness deviation of ±1 monolayer has a noticeable effect on the studied mixer’s operational parameters, especially on its dynamic range.

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