The Solid State

Hannay, N. B.; Kaiser, Walter; Thurmond, C. D.

doi:10.1146/annurev.pc.11.100160.002203

Cited by 2 publications

(2 citation statements)

References 79 publications

(81 reference statements)

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“…Numerous researchers have considered the possibility that whisker growth results from recrystallization, but not specifically DRX. [4][5][6][7][8] The DRX process explains many of the general behaviors of the whisker phenomenon as well as observations that are specific to Sn whisker development.…”

Section: Dynamic Recrystallizationmentioning

confidence: 99%

See 1 more Smart Citation

Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part I: A Model

Vianco

Rejent

2009

J. Electron. Mater.

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A model is proposed that attributes whisker growth in metals and alloys to dynamic recrystallization (DRX) and, in particular, DRX at the material surface. Each step in the DRX process was correlated to the development of whiskers. The DRX model depends upon the details of the deformation process(es) responsible for new grain initiation and growth. The dependencies exhibited by DRX as a function of deformation strain rate, temperature, and microstructure correlate with the behaviors of whisker development. Anomalous or ultrafast diffusion mechanisms, either by themselves or associated with the deformation structures, provide the means of mass transport necessary to grow whiskers. In Part II of this study, the strain and rate kinetics data are determined for Sn. Parts I and II, together, provide a critical step towards developing a capability to predict the conditions that are likely to cause whisker growth in engineering applications.

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Section: Dynamic Recrystallizationmentioning

confidence: 99%

“…An early work that mentions recrystallization as a source of whisker growth was by Hannay et al 5 The authors proposed that whisker growth was preferred, energetically, to more generalized grain growth processes. In fact, recrystallization has a very high driving force.…”

Section: Metal Whisker Growth By Recrystallization: Backgroundmentioning

confidence: 99%