The spontaneous resistivity anisotropy in Ni-based alloys

Campbell, I. A.; Fert, A.; Jaoul, O.

doi:10.1088/0022-3719/3/1s/310

Cited by 208 publications

(157 citation statements)

References 11 publications

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“…Above 6 nm ρ rises gradually, approaching a constant bulk value consistent with Potter and McGuire [15] whose earlier work indicated no dependence of ρ on the film thickness. This bulk value of ρ is dependent on the dopant species and scales in accordance with the predictions of CFJ [20]. The smallest AMR occurs for Cr doped samples due to the formation of a d ↑ bound state close to the Fermi energy [21] increasing the value of ρ ↑ .…”

Section: Experiments and Resultssupporting

confidence: 80%

“…The term ρ ↑↓ parametrizes spin mixing arising from the coupled Boltzmann equations, one for each conduction channel. This spin mixing can be attributed to electron-magnon scattering [20]. This theory showed that the AMR ratio was largest for alloys with the largest ρ ↓ /ρ ↑ , which depends on the density of states at the Fermi energy which can be manipulated using dopants.…”

Section: Introductionmentioning

confidence: 99%

“…The theory of Smit was successful in explaining AMR but made few quantitative predictions. Campbell and Fert, however, explained temperature dependent deviation of the resistivity of ferromagnet-based alloys from Matthiessen's rule in terms of the two-current model [19], and later with Jaoul expanded this into a quantitative theory for the AMR ratio in Ni-based alloys [20]. Using a Boltzmann analysis within the two-current model they arrived at the equation…”

Section: Introductionmentioning

confidence: 99%

“…The constant γ (≈ 0.0075) [20] is proportional to the strength of the SOI energy relative to the exchange energy. The terms ρ ↑ and ρ ↓ parametrize the resistivity of the two spin conduction channels within the Mott two-current model.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model

2014

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Electron-magnon spin-flip scattering in thin films was studied by investigating the thickness dependence of the anisotropic magnetoresistance (AMR) effect and spin-wave stiffness. The absolute resistivity change due to the AMR effect ( ρ) in Ni, Ni:V, and Ni:Cr doped films reduced with film thickness. This loss of AMR is due to enhanced spin-flip scattering, dropping at the same thickness irrespective of dopant. The spin-wave stiffness reduced at the same thickness, confirming enhanced electron-magnon spin-flip scattering. The AMR ratio was fitted with a simple model, in which thickness dependence was included in a spin mixing resistivity term. This analysis gives insight into the fundamental contribution of magnon scattering to the resistivity in thin films, which ultimately has relevance to spin coherence in spintronic devices.

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Section: Experiments and Resultssupporting

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model

2014

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“…де ρ || -електричний опір в повздовжньому, а ρ ⊥ -в перпендикуля-рному магнетних полях, а Двострумовий модель провідности, розглянутий Кемпбелом, Фе-ртом та Джеолом [42,[61][62][63], дав успішне пояснення ФАО завдяки врахуванню додаткового розсіяння в d-стани зі спінами «вгору» та «вниз», що виникають внаслідок дії спін-орбітального зв'язку. В рамках цього моделю показано тісний зв'язок між ФАО та параме-трами електронної структури (густиною станів d-електронів з різ-ними спіновими орієнтаціями).…”

Section: магнетоопір та тензоопір з урахуванням впливу напруження розunclassified

Tensoresistance of Amorphous Ferromagnetics

Semen’ko

Zakharenko

Kunitsky³

et al. 2009

Usp. Fiz. Met.

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Розглянуто сучасний стан проблеми, що склався в дослідженнях впливу зовнішніх механічних напружень на електроопір (тензорезистивного ефекту) аморфних металевих стопів. Систематизовано результати дослі-джень тензоопору низки аморфних феромагнетних стопів. Запропоновано та теоретично обґрунтовано механізм тензоопору в аморфних феромагне-тиках. Наведено результати дослідження впливу магнетного поля на тен-зоопір. Розглянуто можливість використання феноменологічного моделю магнетування та формалізму поля анізотропії для інтерпретації залежно-сти ΔЕ-ефекту від магнетного поля та обґрунтування його ролі в тензоре-зистивнім ефекті.Рассмотрено современное состояние проблемы, которая сложилась в ис-следованиях влияния внешних механических напряжений на электросо-противление (тензорезистивного эффекта) аморфных металлических сплавов. Систематизированы результаты исследования тензосопротивле-ния ряда аморфных ферромагнитных сплавов. Предложен и теоретически обоснован механизм тензосопротивления в аморфных ферромагнетиках. Приведены результаты исследований влияния магнитного поля на тензо-сопротивление. Рассмотрена возможность использования феноменологи-ческой модели намагничивания и формализма поля анизотропии для ин-терпретации зависимости ΔЕ-эффекта от магнитного поля и обоснования его роли в тензорезистивном эффекте.Current state in the investigation of the influence of external mechanical stresses on the electrical resistance (tensoresistive effect) of the amorphous

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Magnetic Devices

Heremans

2003

Digital Encyclopedia of Applied Physics

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The spontaneous resistivity anisotropy in Ni-based alloys

Cited by 208 publications

References 11 publications

Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model

Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model

Tensoresistance of Amorphous Ferromagnetics

Magnetic Devices

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