The Stabilizing Effects of PMMA Passivation on SolutionProcessed Indium-Zinc Oxide Thin-Film Transistors

Abstract

We investigated poly(methyl methacrylate) (PMMA) passivation of solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). PMMA provides solution-processability and good barrier characteristics against environmental elements such as water and oxygen. The PMMA passivation layers protect the IZO active layer of the TFTs without deteriorating their performance during gate bias stress measurements under ambient conditions, and improve their electrical properties by decreasing leakage current. Moreover, the potential to safely manipulate IZO-TFTs after PMMA passivation was proven by realizing a simple n-channel resistive-load inverter. † (

Newly Observed Temperature and Surface Ligand Dependence of Electron Mobility in Indium Oxide Nanocrystals Solids

“…11 However, it has a number of drawback that OA acted as bulky insulating barrier between NCs, preventing charge transport, and the complete removal of long hydrocarbon chain surface ligand by thermal treatment often generated multiple surface dangling bonds, mid-gap chargetrapping states and typically led to sintering of NCs. 12, 13 Numerous literature reports studied the effect of length of ligand molecules on charge transport in arrays of NCs, for instance PbS quantum dot, which shows that a strongly-coupled, high mobility can be achieved by replacing bulky, insulating hydrocarbons that are used as ligands during synthesis with shorter ligands, which reduces the interparticle spacing and allows 4 proximal NCs. [14][15][16][17] Here, we demonstrate the use of high-performance In 2 O 3 NC TFTs with short molecules as ligands to reduce interparticle spacing and to improve mobility.…”