The status of crystalline Si modules

Margadonna, D.; Ferrazza, Francesca

doi:10.1016/s0960-1481(98)00141-4

Cited by 4 publications

(4 citation statements)

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“…In 2011, more than 85% of the solar cell industries were based on the single crystal and mc-Si [1]. Since 60% of the solar cell cost is due to the wafer material and mc-Si has 30-50% lower cost compared to mono crystalline (mono c-Si), mc-Si is getting a significant attention for the future solar energy market [2] [3]. Compared to mono c-Si, the low electrical performance of mc-Si is the main drawback, which increases the cell processing cost.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of electrical performance of acid textured multi crystalline silicon solar cells

Assi

Al‐Amin²

2012

2012 International Conference on Renewable Energies for Developing Countries (REDEC)

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Multicrystalline silicon (mc-Si) material is a promising alternative to monocrystalline CZ silicon because of its lower cost. Solar cell industries are investing in the improvement of electrical performance of mc-Si to make it competitive in the solar cell market. To improve the absorption of incident light, an isotropic texture using nitric acid (HNO 3 ), hydrofluoric acid (HF) and demineralized (i.e. dionized) water (DI H 2 O) is widely used but leads to etch pits at the grain boundary. In this research work, the formation of etch pits and its impact on the electrical performance of the solar cell has been analyzed. In addition, phosphorus diffusion temperature, phosphorus concentration, coating thickness (CT), refractive index (RI) of the anti reflection coating (ARC), and sintering speed of metal electrodes have been investigated. A batch of 156 mm 2 (SQ) is fabricated with 16.54% average cell efficiency which is 0.42%absolute higher and the shunt resistance (R sh ) is increased by two fold compared to the standard process. The surface morphology, reflectance factor (RF), open circuit voltage (V oc ), short circuit current (I sc ), fill factor (FF), and cell efficiency (η) have been analyzed and compared also with the standard process.

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Section: Introductionmentioning

confidence: 99%

Enhancement of electrical performance of acid textured multi crystalline silicon solar cells

Assi

Al‐Amin²

2012

2012 International Conference on Renewable Energies for Developing Countries (REDEC)

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“…price of the silicon wafer [1,2]. In this respect, the high quality poly-Si thin film is an attractive alternative due to its relatively cheap fabrication cost [3].…”

Section: Introductionmentioning

confidence: 99%

Low temperature processing of a large grain polycrystalline silicon thin film on soda-lime glass

Wang¹,

Wong²

2011

Semicond. Sci. Technol.

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We have demonstrated that a polycrystalline silicon thin film can be fabricated in situ on soda-lime glass at 450 • C by an Al-induced crystallization method using electron beam evaporation. The catalytic Al is found to diffuse to the top of the crystallized Si layer and can be easily etched away by a mixture of acids. This low temperature Si crystallization process is well explained by thermodynamic consideration. Subsequent annealing at the same temperature (450 • C) for 6 h improves the crystallinity of the film and enlarges the average grain size to over 5 μm. There are no observable impurity phases. The poly-Si thin films are (1 1 1) oriented and all the grains are well aligned. A defect-free and excellent crystalline structure has been revealed by transmission electron microscopy. The measured resistivity, carrier concentration and charge mobility of these as-prepared poly-Si thin films indicate that our present low temperature processing technique has great advantage and prospect for the photonics industry.

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“…Although screen-printing technology has many limitations, including an inability to form fine lines, achieve good metal conductivity and low contact resistance, it is generally used to fabricate cells for reduced production costs and fast processes for mass production. 1) Previous researches showed that the glass frit plays the most important role during contact formation: etching through the antireflection coating and accomplish good ohmic contact and a transport medium for the silver crystals to grow into the h111i planes of the inverted pyramids and then the formation of Ag-Si contacts below the silversilicon eutectic temperatures. 2) Various experiments with Ag pastes were carried out to examine the silver transport and growth process in detail.…”

Section: Introductionmentioning

confidence: 99%

“…2) Various experiments with Ag pastes were carried out to examine the silver transport and growth process in detail. 1,2) At temperatures typically above 600 C, the glass frits become fluid, wet the SiN x , and begin to etch the SiN x layer. 3) After that process, the melted glass is etched into silicon through a redox reaction between the lead oxide and silicon.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Screen Printed Silicon Solar Cell Dependent upon Thermophysical Behavior of Glass Frits in Ag Pastes

Kim

Shim

Hwang

et al. 2009

jjap

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The status of crystalline Si modules

Cited by 4 publications

References 0 publications

Enhancement of electrical performance of acid textured multi crystalline silicon solar cells

Enhancement of electrical performance of acid textured multi crystalline silicon solar cells

Low temperature processing of a large grain polycrystalline silicon thin film on soda-lime glass

Electrical Properties of Screen Printed Silicon Solar Cell Dependent upon Thermophysical Behavior of Glass Frits in Ag Pastes

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