The strange diffusivity of Ag atoms in CdTe

Wolf, H.; Deicher, M.; Ostheimer, V.; Schachtrup, A. Rodriguez; Stolwijk, N. A.; Wichert, Th.

doi:10.1016/s0921-4526(01)00843-2

Cited by 4 publications

(3 citation statements)

References 9 publications

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“…It seems that the reason of that is not small statistic or low apparatus sensitivity or other typical experimental difficulties but rather ''abnormall'' behavior of them in some cases. According to recent publications [65][66][67][68][69] at temperatures ranged 700-900 K the diffusion of Cu, Ag, Au in CdTe exhibits anomalous concentration profiles (uphill) depending upon the external conditions during diffusion; these anomalies essentially reflect the profile of the deviation from stoichiometry. As evident, there is considerable variation in the pre-exponential factor of copper diffusion, while values of the activation energy are much closer.…”

Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 99%

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Shcherbak

Kopach

Fochuk

et al. 2015

J. Phase Equilib. Diffus.

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Understanding of self-and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius' parameters (D=D 0 exp(2DE a /kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D 0 , and the activation energy, DE a , of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. Reasons of the lack of correspondence of the data to compensative dependence are discussed.

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Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 99%

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Shcherbak

Kopach

Fochuk

et al. 2015

J. Phase Equilib. Diffus.

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“…It will be shown that due to the interaction of extrinsic defects with intrinsic point defects anomalous diffusion profiles are created that can be varied between peak shaped and U shaped depending on the diffusion conditions. Preliminary results of this work were published in [5][6][7].…”

mentioning

confidence: 99%

Anomalous Diffusion Profiles of Ag in CdTe due to Chemical Self-Diffusion

2005

Self Cite

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Anomalous diffusion profiles of Ag in single crystalline CdTe were observed using the radiotracer 111 Ag. The diffusion anneals were performed at 800 K under Cd or Te vapor and in a vacuum for different Ag concentrations. The measured Ag profiles directly reflect the distribution of the self-interstitials and vacancies of the Cd sublattice and are the result of chemical self-diffusion which describes the variation of the deviation from stoichiometry of the binary crystal as a function of depth and time.

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“…In addition, both elements are reported to be incorporated as interstitial donors and the mobility of interstitial Cu or Ag atoms is known to be very high [1,2,3]. The influence of the respective lattice site on the diffusion of Ag or Cu in CdTe was discussed in an earlier work [4] and it was shown that Ag atoms are displaced by Cu atoms if both elements were diffused simultaneously into a CdTe crystal [4,5]. In this paper, the pronounced influence of intrinsic defects on the diffusion of Ag and Cu atoms is demonstrated and a model that describes the experimental diffusion profiles based on reactions between the group I elements and intrinsic defects of the Cd sublattice is presented.…”

Section: Introductionmentioning

confidence: 99%

The Role of Intrinsic Defects for the Diffusion of Ag and Cu in CdTe

Wolf

Wagner

Wichert

2005

DDF

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Ag and Cu diffused into CdTe exhibit unusual shapes of their concentration profiles, especially if the diffusion was performed under Cd vapor pressure. The shapes of the concentration profiles at low concentrations of Ag or Cu are well described by a model based on the interaction with intrinsic defects. In that model the characteristic features of the profiles can be independently reproduced by appropriate parameters. It turns out that the resulting profiles are determined by the diffusion of interstitial Cd atoms and reflect the actual distribution of the intrinsic defects in the crystal, i.e. the deviation from stoichiometry.

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The strange diffusivity of Ag atoms in CdTe

Cited by 4 publications

References 9 publications

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Anomalous Diffusion Profiles of Ag in CdTe due to Chemical Self-Diffusion

The Role of Intrinsic Defects for the Diffusion of Ag and Cu in CdTe

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