The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder

Iqbal, Muhammad Zahir; Kelekci, O.; Eom, Jonghwa

doi:10.1016/j.carbon.2013.03.030

Cited by 41 publications

(22 citation statements)

References 38 publications

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“…It is already reported that the shift of the G and 2D peaks positions toward lower wavenumbers is attributed to n-type doping [34, 40, 44, 45], and the shift of the G and 2D peaks positions toward higher wavenumbers is attributed to p-type doping in graphene layers [46–48]. Figure 2(a) shows the Raman spectra of pristine and KNO 3 -doped SLG.…”

Section: Resultsmentioning

confidence: 92%

Improving the electrical properties of graphene layers by chemical doping

Khan

Iqbal

Eom

2014

Science and Technology of Advanced Materials

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Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO3) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO3. The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics.

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Section: Resultsmentioning

confidence: 92%

Improving the electrical properties of graphene layers by chemical doping

Khan

Iqbal

Eom

2014

Science and Technology of Advanced Materials

Self Cite

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“…Recent studies have successfully demonstrated the experimental realization of a Zachariasen carbon monolayer employing low-pressure chemical vapor deposition (LPCVD) 32 . Further, disordered graphene has been achieved using alternate methods such as CVD 33 , ion irradiation 16 , 34 , 35 and electron irradiation 36 , 37 . The disordered graphene thus obtained have been shown to exhibit notably distinct properties as compared to the crystalline graphene (CG) 37 .…”

Section: Introductionmentioning

confidence: 99%

Evidence of a two-dimensional glass transition in graphene: Insights from molecular simulations

Rena

Kumar

Agarwal

et al. 2019

Sci Rep

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Liquids exhibit a sudden increase in viscosity when cooled fast enough, avoiding thermodynamically predicted route of crystallization. This phenomenon, known as glass transition, leads to the formation of non-periodic structures known as glasses. Extensive studies have been conducted on model materials to understand glass transition in two dimensions. However, despite the synthesis of disordered/amorphous single-atom thick structures of carbon, little attention has been given to glass transition in realistic two-dimensional materials such as graphene. Herein, using molecular dynamics simulation, we demonstrate the existence of glass transition in graphene leading to a realistic two-dimensional glassy structure, namely glassy graphene. We show that the resulting glassy structure exhibits excellent agreement with experimentally realized disordered graphene. Interestingly, this glassy graphene exhibits a wrinkled but stable structure, with reduced thermal vibration in comparison to its crystalline counterpart. We suggest that the topological disorder induced by glass transition governs the unique properties of this structure.

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“…Most of the investigations focus on low-and medium-energy electron-beams [17,18] and ion-beams (with energies in the range eV/u to keV/u) [19][20][21] irradiation effects on graphene. A.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of irradiation effects in graphite and graphene induced by swift heavy ions and highly charged ions

Zeng

Liu

Yao

et al. 2016

Carbon

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Highly oriented pyrolytic graphite (HOPG) and monolayer graphene were irradiated by swift heavy ions (SHI, 479 MeV 86 Kr and 250 MeV 112 Sn) and highly charged ions (HCI, 4 MeV 86 Kr 19+). The irradiation effects caused by different types of irradiation were investigated by Raman spectroscopy. It was found that the intensity ratio of D peak to G peak (I D /I G) in the case of HCI was higher than that of SHI for the same ion fluence in HOPG. The larger I D /I G indicates that synergistic effects of kinetic and potential energies of medium energy HCI has to be considered during the energy deposition process. A turning point was detected during the evolution process of I D /I G with fluence obtained from SHI and HCI impacted graphene, while such turning point was absent in the case of HOPG. The Lucchese's phenomenological model was modified and the experimental data of I D /I G vs. fluence for HOPG and graphene was completely following the modified model. According to this model, energetic ions induced both structurally disordered and activated regions in graphene. The competing mechanism of these two regions resulted in three different trends of the I D /I G variation in the case of graphene whereas in HOPG, such mechanism was not observed.

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The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder

Cited by 41 publications

References 38 publications

Improving the electrical properties of graphene layers by chemical doping

Improving the electrical properties of graphene layers by chemical doping

Evidence of a two-dimensional glass transition in graphene: Insights from molecular simulations

Comparative study of irradiation effects in graphite and graphene induced by swift heavy ions and highly charged ions

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