The structural and electrical studies on the Boron-doped SnO2 films deposited by spray pyrolysis

Zhang, B.; Tian, Yuan; Zhang, J.X.; Cai, Weiping

doi:10.1016/j.vacuum.2011.02.005

Cited by 28 publications

(14 citation statements)

References 17 publications

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“…Zhang et al . 27 performed experiments regarding the effect of B in tin oxide and they predicted that B can either be at a Sn substitutional site or occupy an interstitial site. Zhang et al .…”

Section: Resultsmentioning

confidence: 99%

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

Filippatos

Kelaidis

Vasilopoulou

et al. 2021

Sci Rep

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Tin dioxide (SnO2), due to its non-toxicity, high stability and electron transport capability represents one of the most utilized metal oxides for many optoelectronic devices such as photocatalytic devices, photovoltaics (PVs) and light-emitting diodes (LEDs). Nevertheless, its wide bandgap reduces its charge carrier mobility and its photocatalytic activity. Doping with various elements is an efficient and low-cost way to decrease SnO2 band gap and maximize the potential for photocatalytic applications. Here, we apply density functional theory (DFT) calculations to examine the effect of p-type doping of SnO2 with boron (B) and indium (In) on its electronic and optical properties. DFT calculations predict the creation of available energy states near the conduction band, when the dopant (B or In) is in interstitial position. In the case of substitutional doping, a significant decrease of the band gap is calculated. We also investigate the effect of doping on the surface sites of SnO2. We find that B incorporation in the (110) does not alter the gap while In causes a considerable decrease. The present work highlights the significance of B and In doping in SnO2 both for solar cells and photocatalytic applications.

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Section: Resultsmentioning

confidence: 99%

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

Filippatos

Kelaidis

Vasilopoulou

et al. 2021

Sci Rep

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show abstract

“…Boron doping was achieved by adding boracic acid (H 3 BO 3 ) to the solution and the BTO (Boron doped tin oxide) films were prepared by an ultrasonic spray pyrolysis (USP) [5]. An aqueous solution of high pure zinc acetate (Zn(CH 3 COO) 2 2H 2 O) was used as precursor.…”

Section: Methodsmentioning

confidence: 99%

Boron-doped zinc oxide thin films fabricated by ultrasonic spray pyrolysis

Lee

Lan

Chao

et al. 2012

2012 17th Opto-Electronics and Communications Conference

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“…The dopant percentage of our calculations is 1 B or In atom per 48 SnO2 atoms, which results in a 2.08% additional doping. Zhang et al [20] performed experiments regarding the effect of boron in tin oxide and they predicted that boron can either substitute a tin atom or occupy an interstitial position .We predict that for the substitutional case, boron atom occupies a tin site and is located at a distance of 1.775 Å from the nearest oxygen atom (refer to Fig. 1a) while for the interstitial case, the boron atom sites at a distance of 1.475 Å from the O-atom (refer to Fig.…”

Section: Bulk Rutile Snomentioning

confidence: 99%

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

Filippatos

Kelaidis

Vasilopoulou

et al. 2021

Preprint

View full text Add to dashboard Cite

Tin dioxide (SnO2), due to its non-toxicity, high stability and electron transport capability represents one of the most utilized transition metal oxides in many optoelectronic devices such as photocatalytic devices, photovoltaics (PVs) and light-emitting diodes (LEDs). However, its wide bandgap reduces its charge carrier mobility and its photocatalytic activity. Doping with various elements is an efficient and low-cost way to decrease SnO2 band gap and maximize photocatalytic applications' potential. Here, we apply density functional theory calculations to examine the effect of p-type doping with B and In of SnO2 on its electronic and optical properties. Calculation predict the creation of shallow energy states in the band gap, near the valence band, when the dopant (B or In) is in interstitial position. In the case of substitutional doping, a significant decrease of the band gap is calculated. We also investigate the effect of doping on the surface sites of SnO2. We find that B incorporation in the (110) does not alter the gap while In causes a notable decrease. The present work highlights the significance of boron and indium doping in SnO2 both for solar cells and photocatalytic applications.

show abstract

The structural and electrical studies on the Boron-doped SnO2 films deposited by spray pyrolysis

Cited by 28 publications

References 17 publications

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

Boron-doped zinc oxide thin films fabricated by ultrasonic spray pyrolysis

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

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