The structural and electrochemical properties of boron-doped nanocrystalline diamond thin-film electrodes grown from Ar-rich and H2-rich source gases

Wang, Shihua; Swope, Vernon M.; Butler, James E.; Feygelson, Tatyana I.; Swain, Greg M.

doi:10.1016/j.diamond.2008.11.033

Cited by 99 publications

(70 citation statements)

References 69 publications

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“…Th e results reveal that the Ti/BDD electrodes have a wide range of working potential stability to water. Th e values obtained for the working potential window of Ti/BDD electrodes are around of 3.0 V. Th is value is comparable to those in the literature for diamond deposited on silicon substrates (25)(26)(27) . Th e advantage of the diamond electrode is the fact that it allows the detection of redox reactions in certain potentials that would be outside the range of work potential of conventional electrodes.…”

Section: Resultssupporting

confidence: 77%

Boron-doped diamond electrodes for carbofuran electrochemical degradation

Santos

Lanza

Ferreira

et al. 2016

RBAV

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Boron-doped diamond electrodes (BDD) were produced on titanium (Ti) . The electrochemical characterization of electrodes was performed by Cyclic Voltammetry, and it was observed large potential windows. The electrochemical oxidation (EO) of the carbofuran were performed at different current densities, flow rates of 50 and 300 Lh -1 for a total of 2 hours with an electrolyte 0.1 M potassium sulfate (K 2 SO 4 ) aqueous solutions and 1,8 x 10 -3 M carbofuran in a flow reactor with recirculation. The efficiency of the pesticide degradation process was monitored by Ultraviolet-Visible Spetrophotometry (UV-Vis), Total Organic Carbon (TOC) and High Performance Liquid Chromatography (HPLC) techniques. The obtained results show that boron doped diamond on titanium substrate (Ti/BDD) anodes are promising for electrochemical treatment in the wastewater. The reducing the TOC concentration, promoted a breakdown of the carbofuran molecule, showing inorganic carbon (CO 2 , CO, H 3 CNH 2 ) formation, rather than the mineralization of organic compounds. This fact may have contributed to the intermediate products formation resulting from the reaction of degradation of the pesticide.

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Section: Resultssupporting

confidence: 77%

Boron-doped diamond electrodes for carbofuran electrochemical degradation

Santos

Lanza

Ferreira

et al. 2016

RBAV

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“…Nano-and poly-crystalline CVD diamond films, however, show complex bands with scattering intensity reaching from 1,100-1,600 cm À 1 (ref. 40). These lines are assigned to various constituents such as sp 2 -bonded carbons, diamond progenitors, amorphous carbon and so on.…”

Section: Methodsmentioning

confidence: 99%

Diamond-integrated optomechanical circuits

et al. 2013

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Diamond offers unique material advantages for the realization of micro-and nanomechanical resonators because of its high Young's modulus, compatibility with harsh environments and superior thermal properties. At the same time, the wide electronic bandgap of 5.45 eV makes diamond a suitable material for integrated optics because of broadband transparency and the absence of free-carrier absorption commonly encountered in silicon photonics. Here we take advantage of both to engineer full-scale optomechanical circuits in diamond thin films. We show that polycrystalline diamond films fabricated by chemical vapour deposition provide a convenient wafer-scale substrate for the realization of high-quality nanophotonic devices. Using free-standing nanomechanical resonators embedded in on-chip Mach-Zehnder interferometers, we demonstrate efficient optomechanical transduction via gradient optical forces. Fabricated diamond resonators reproducibly show high mechanical quality factors up to 11,200. Our low cost, wideband, carrier-free photonic circuits hold promise for all-optical sensing and optomechanical signal processing at ultra-high frequencies.

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“…Several solutions were prepared with different concentrations of B 2 O 3 dissolved in CH 3 OH of 2,000, 5,000, 10,000, 20,000 and 30,000 ppm of boron atoms in relation to the carbon atoms of the CH 3 OH (B/C ratios). The volume of CH 3 OH was fixed at 200 mL for all solutions. These boron doping levels correspond to the acceptor density values that varied from 10 20 to 10 21 B.cm −3 as the doping level increased evaluated by Raman spectra (not shown).…”

Section: Methodsmentioning

confidence: 99%

“…The diamond films depositions were performed with the HFCVD technique using the following growth parameters: temperature of 900 K, pressure of 6.7 kPa, 16-hour deposition time and gas mixture of CH 4 3 B is produced, which is probably the substance containing boron that is added to the gas mixture during the growth process. Several solutions were prepared with different concentrations of B 2 O 3 dissolved in CH 3 OH of 2,000, 5,000, 10,000, 20,000 and 30,000 ppm of boron atoms in relation to the carbon atoms of the CH 3 OH (B/C ratios).…”

Section: Methodsmentioning

confidence: 99%

“…Wang et al [3] have reported an investigation of the electrochemical properties of boron-doped ultrananocrystalline diamond (BDUND) and borondoped nanocrystalline diamond (BDND) films. They concluded that, despite the morphological and structural distinctions, these films have comparable electrical and electrochemical properties that are dominated by the boron which was inserted into the diamond grains replacing the carbon.…”

Section: Introductionmentioning

confidence: 99%

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The influence of boron doping in the growth of ultra/nanocrystalline diamond films

et al. 2012

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Boron-doped nanocrystalline diamond (BDND) films were grown on silicon substrates by hot filament chemical vapor deposition in Ar/H 2 /CH 4 gas mixtures. The boron source was obtained from an additional H 2 line passing through a bubbler containing B 2 O 3 dissolved in methanol with different B/C ratios. The transition from ultrananocrystalline to nanocrystalline diamond films is clearly shown by the addition of boron dopant to the growth gas mixture. The morphology and structure of these films have markedly different properties. The top view and the cross section of the films were characterized by scanning electron microscopy showing the transition from ultrananocrystalline growth (renucleation process) to a columnar structure of NCD films. Finally, the grain size was obtained from X-ray diffraction patterns of the films. The diamond average grain size increased from 10 to 35 nm for films with 2000 and 30,000 ppm B/C, respectively.

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The structural and electrochemical properties of boron-doped nanocrystalline diamond thin-film electrodes grown from Ar-rich and H2-rich source gases

Cited by 99 publications

References 69 publications

Boron-doped diamond electrodes for carbofuran electrochemical degradation

Boron-doped diamond electrodes for carbofuran electrochemical degradation

Diamond-integrated optomechanical circuits

The influence of boron doping in the growth of ultra/nanocrystalline diamond films

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