The structural homogeneity of boron carbide thin films fabricated using plasma-enhanced chemical vapor deposition from B5H9+CH4

Pairwise cobalt doping of boron carbides with cobaltocene

“…In spite of these considerations, this effort provides a better insight into the local structure of icosahedral boron carbides than previous NEX-AFS studies. 37,38 Unlike some predictions, 31 the data presented here provide some evidence that the icosahedral cage is preserved in the PECVD grown C 2 B 10 H x semiconducting boron carbides. The pairing of the cobalt atoms, but not in close proximity, suggests a role for strain or extended orbitals.…”

Investigation of composition of boron carbide thin films by resonant soft x-ray reflectivity

“…The compositional changes in the boron carbide causes significant changes in its optical constants in the vicinity of B K-edge and limits maximum achievable throughput from boron carbide based MLs [12]. The optical band gap of boron carbide and the properties of boron carbide/Si diodes can be varied by simply changing composition of boron carbide [13][14][15]. In many practical applications boron carbide thin films with thickness ranging from a fraction of a nanometer to several nanometers have been used.…”

The local structure of transition metal doped semiconducting boron carbides

“…The local structure of the cobalt doped semiconducting boron carbide has been determined by extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge structure (XANES) spectroscopies [22,26] and to some extent in model cluster calculations [27]. Application of XANES and EXAFS techniques to determine the local structure of the undoped boron carbides has not been successful likely due to the low boron and carbon K-shell x-ray cross-sections [28,29], although the extended electron energy loss fine structure has proved to be a comparatively useful technique [30]. With metal doping, at least local structure in the vicinity of the transition metal is now accessible.…”