The structural, linear and nonlinear optical properties of high-quality Zn1-xPbxO nanostructured thin films for optoelectronic device applications

Bairy, Raghavendra; Haleshappa, D.; Murari, M.S.

doi:10.1007/s00340-021-07659-w

Cited by 8 publications

(3 citation statements)

References 37 publications

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“…Notably, films deposited with 5 wt.% of Cd concentration exhibit greater transparency than the undoped ZnS counterparts. This improved transparency observed in the 5 wt.% Cd-doped ZnS films can be attributed to their reduced thickness, resulting in lower light scattering losses [30]. The value of α (absorption coefficient) is directly proportional to the energy (E) of the incident photon (hν), as described by the relationship [31]:…”

Section: Optical Propertiesmentioning

confidence: 99%

Enhanced optical third-harmonic generation in phase-engineered nanostructured Zn_1−xCd _x S thin films for optoelectronic device applications

Bairy,

Vijeth,

Rajesh

et al. 2024

J. Phys. D: Appl. Phys.

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A polycrystalline nanostructured thin film of zinc cadmium sulfide (ZnCdS) was meticulously fabricated on a glass substrate using the thermal evaporation method (PVD) within a vacuum chamber. Different doping concentrations were introduced by varying the cadmium (Cd) content, resulting in Zn1-xCdxS films with Cd concentrations ranging from x = 0.00 to 0.20 wt %. The impact of Cd doping on the third-order nonlinear optical (TONLO) properties of these films was thoroughly studied using the Z-scan method, employing a Diode-Pumped Solid-State (DPSS) CW laser. To gain insight into the structural characteristics, the Zn1-xCdxS thin films underwent analysis through X-ray diffraction. Optical studies confirmed the tunability of the optical band gap (Eg) in the Zn1-xCdxS films, ranging from 3.88 eV for undoped ZnS to 2.80 eV for the film fabricated with 20 wt. % of Cd-content. This significant reduction in 'Eg' renders the films highly suitable for use as absorbing layers in applications such as solar cells and optoelectronics. Surface morphology analysis, performed via Field Emission Scanning Electron Microscopy (FESEM), revealed noticeable alterations with increased Cd doping. Significantly, the doped films exhibited a substantial redshift in the band edge and an increase in transmittance within the visible and near-infrared regions. The investigation of TONLO properties, including the nonlinear absorption (NLA) coefficient (β), nonlinear refractive (NRI) index (n2) and susceptibility χ(3), yielded values ranging from 3.15 x 10-3 to 8.16 x 10-3 (cmW-1), 1.65 x 10-8 to 7.45 x 10-8 (cm2 W-1), and 3.12 x 10-5 to 7.86 x 10-5 (esu), respectively. These results indicate the presence of self-defocusing nonlinearity in the films. Overall, the outcomes underscore the potential of Cd-doped ZnS nanostructures in modifying surface morphology and enhancing NLO characteristics. Zn1-xCdxS thin films exhibit promise for applications in nonlinear optical devices, as evidenced by these encouraging findings.

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Section: Optical Propertiesmentioning

confidence: 99%

Enhanced optical third-harmonic generation in phase-engineered nanostructured Zn_1−xCd _x S thin films for optoelectronic device applications

Bairy,

Vijeth,

Rajesh

et al. 2024

J. Phys. D: Appl. Phys.

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“…Te absorption coefcient (α) of all thin flms is calculated using the transmission, refection, and thickness measurements obtained using the equation [18] and is found to be on the order of 10 4 cm −1 as follows:…”

Section: Edax For Compositionalmentioning

confidence: 99%

Role of Cobalt Doping on the Physical Properties of CdO Nanocrystalline Thin Films for Optoelectronic Applications

Bairy¹,

Somayaji²,

Marakala³

et al. 2022

Advances in Materials Science and Engineering

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In the current work, the authors aim to present an insight on the role of cobalt (Co) doping for the structural, morphological, and linear and nonlinear optical (NLO) properties of CdO thin films. The films were prepared using the spray pyrolysis (SP) technique, and the weight % of Co (x) was varied from 0–10. The structural properties of the films were confirmed by the powder X-ray diffraction (P-XRD) studies and are polycrystalline with a cubic structure and a lattice parameter of 0.4658 nm. As Co content in CdO films increases, cluster grain size and porosity decrease significantly, as seen in surface topographic and nanostructural analysis. Through the Burstein–Moss shift, the optical band gap “Eg” in Co: CdO film decreases from 2.52 to 2.05 eV with the increase in Co-doping. To study the NLO parameters, open aperture (OA) and closed aperture (CA) Z-scan measurements were performed using the diode-pumped solid-state continuous wave laser excitation (532 nm), and with the increased Co-content, the NLO parameters—nonlinear absorption coefficient (β∼10−3 cm/W), nonlinear refractive index n 2 ∼ 10−8 cm2/W), and the 3rd-order NLO susceptibility χ 3 ∼ 10−7 to 10−6 e.s.u.) values were determined and found to be enhanced. The maximum NLO parameters achieved in the present study with increasing Co concentration on CdO nanostructures prepared by the SP method are found to be the highest among the reported values and suggest that processed films are a capable material for optoelectronic sensor applications.

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“…The relevance of this problem is mostly due to a large number of novel optical materials being developed in the last decade. Many studies have also reported the development of novel optoelectronic devices based on the proposed materials [ 3 , 4 , 5 ]. One of the key material parameters highly relevant for some of these developments and responsible for nonlinear photorefractive response is the nonlinear refractive index.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Nonlinear Optical Properties of Quantum Dots Deposited onto a Sample Glass Using Time-Resolved Inline Digital Holography

et al. 2022

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We report on the application of time-resolved inline digital holography in the study of the nonlinear optical properties of quantum dots deposited onto sample glass. The Fresnel diffraction patterns of the probe pulse due to noncollinear degenerate phase modulation induced by a femtosecond pump pulse were extracted from the set of inline digital holograms and analyzed. The absolute values of the nonlinear refractive index of both the sample glass substrate and the deposited layer of quantum dots were evaluated using the proposed technique. To characterize the inhomogeneous distribution of the samples’ nonlinear optical properties, we proposed plotting an optical nonlinearity map calculated as a local standard deviation of the diffraction pattern intensities induced by noncollinear degenerate phase modulation.

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The structural, linear and nonlinear optical properties of high-quality Zn1-xPbxO nanostructured thin films for optoelectronic device applications

Cited by 8 publications

References 37 publications

Enhanced optical third-harmonic generation in phase-engineered nanostructured Zn_1−xCd _x S thin films for optoelectronic device applications

Enhanced optical third-harmonic generation in phase-engineered nanostructured Zn_1−xCd _x S thin films for optoelectronic device applications

Role of Cobalt Doping on the Physical Properties of CdO Nanocrystalline Thin Films for Optoelectronic Applications

Investigation of Nonlinear Optical Properties of Quantum Dots Deposited onto a Sample Glass Using Time-Resolved Inline Digital Holography

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The structural, linear and nonlinear optical properties of high-quality Zn1-xPbxO nanostructured thin films for optoelectronic device applications

Cited by 8 publications

References 37 publications

Enhanced optical third-harmonic generation in phase-engineered nanostructured Zn1−x Cd x S thin films for optoelectronic device applications

Enhanced optical third-harmonic generation in phase-engineered nanostructured Zn1−x Cd x S thin films for optoelectronic device applications

Role of Cobalt Doping on the Physical Properties of CdO Nanocrystalline Thin Films for Optoelectronic Applications

Investigation of Nonlinear Optical Properties of Quantum Dots Deposited onto a Sample Glass Using Time-Resolved Inline Digital Holography

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Enhanced optical third-harmonic generation in phase-engineered nanostructured Zn_1−xCd _x S thin films for optoelectronic device applications

Enhanced optical third-harmonic generation in phase-engineered nanostructured Zn_1−xCd _x S thin films for optoelectronic device applications