The structural, morphological, optical and gas-sensing properties of Mn3O4 thin films grown by successive ionic layer adsorption and reaction technique

Effect of Annealing and Doping Process of the Zn1-xTixO Films

“…35, 3.38, 3.40, 3.39 and 3.38 eV for ZnO, Zn0.95Ti0.05O, Zn0.90Ti0.10O, Zn0.85Ti0.15O and Zn0.80Ti0.20O, respectively. The calculations were made by Tauc Plot (Tekin & Karaduman Er, 2022). Results depended on doping and annealing is in agreement with literature (Pawar et al, 2018).…”

Effect of Ultraviolet Light on Mn3O4 Thin Films that are Grown Using SILAR for Room-Temperature Ozone Gas Sensors

“…29 Table I summarizes the key parameters for gas sensors that use p-type Mn 3 O 4 from previous studies. 16,18,[30][31][32][33][34][35] It is difficult to compare device performance with that for state-of-the-art gas sensors because the device structure, operating conditions, target gas and annealing temperatures differ but these results show that there is a correlation between the results for Mn 3 O 4 porous thin films that are produced using low-temperature SILAR by this study and those for other studies.…”

“…The major p-type MOS materials that have been studied for gas sensing purposes include Cu 2 O, 13 CuS, 14 NiO 15 and Mn 3 O 4 . 16 Among them, Mn 3 O 4 stands out as a promising candidate for flexible gas sensors. This is because Mn 3 O 4 can be deposited as thin films through SILAR method at room temperature.…”

“…This is because Mn 3 O 4 can be deposited as thin films through SILAR method at room temperature. 16 In addition, due to the vast gas accessibility induced by point defects, Mn 3 O 4 has high O 3 adsorption capacity and thus is an excellent material for O 3 gas-sensing. 17,18 Conventional gas sensors based on Mn 3 O 4 usually operate at high temperatures (>150 °C) so the longterm stability is still a challenge.…”

“…17,18 Conventional gas sensors based on Mn 3 O 4 usually operate at high temperatures (>150 °C) so the longterm stability is still a challenge. 16 Ultraviolet (UV)-irradiation provides additional energy for thermal annealing or photoactivation. In terms of the synthesis of materials, the photon energy from UV radiation initiates the formation of a metal-oxide-metal network in the film so a lower temperature is required for thermal annealing.…”