“…4,5 The fast and reversible phase transition in Ge 2 Sb 2 Te 5 alloys can be achieved by Joule heating, 5 and this process can be employed in nonvolatile phase-change memory with lower programming voltages and higher memory densities than mainstream nonvolatile memory technologies. 2,3,6,7 Some layered and two-dimensional (2D) materials including MoTe 2 have been reported or predicted to exhibit structural phase changes during chemical processes, 8,9 temperature changes, [10][11][12][13][14] and tensile strains. 15,16 Some single layer transition metal dichalcogenide (TMD) monolayers, including monolayer MoTe 2 , can exist in a semiconducting trigonal prismatic state found in the bulk 2H structure, a semimetallic distorted octahedral state found in the bulk 1T′ monoclinic and orthorhombic (sometimes referred to as T d ) phases, and possibly other structures.…”