The structure of ion-implanted gold layers in single crystal silicon

Matthews, M. D.; James, Peter

doi:10.1080/14786436908228643

Cited by 11 publications

(2 citation statements)

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“…The observed recrystallization temperature of about 740 O c is in disagreement with that observed by Matthews and James (1969) in an electron microscopic study of the same system. For doses of about 1016 ions/cm2, similar to that used here, they found an annealing temperature of around 630 "c. In addition they found that the implanted gold started to form precipitates in the temperature range 300-500"~.…”

Section: Discussionsupporting

confidence: 58%

Segregation of gold to the silicon (111) surface observed by Auger emission spectroscopy and by LEED

Bishop

Riviére

1969

J. Phys. D: Appl. Phys.

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A silicon crystal implanted with gold was heated to successively higher temperatures, reaching a maximum of 1250°C, and its surface examined by Auger emission spectroscopy (AES) and LEED at each stage. No recrystallization was observed until the crystal had been heated to 740°C, at which point the AES analysis could be interpreted in terms of the appearance of gold atoms at the surface. At 810°C the Auger peaks from gold were considerably larger than those from silicon, but decreased progressively thereafter as the temperature was raised until, at over 1000°C, the differential distribution was indistinguishable from that of clean silicon. The first LEED pattern observed, at 740°C, was not the Si(111)-7 pattern, but another familiar one, the Si(111)-(radical3 × radical3)-R30° pattern. With increasing temperature, the fraction one-third-order pattern spread over the whole surface and, above 900°C, was joined by another, a fraction one-fifth-order pattern, probably based on a domain structure. At the highest temperature no fractional orders were visible, only a Si (111)-(1 × 1) pattern, with good spot-to-background contrast. The normal 7-pattern could only be achieved by ion bombardment and annealing, not by heat treatment alone, suggesting that there was still a very high density of dislocations remaining from the implantation.

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Section: Discussionsupporting

confidence: 58%

Segregation of gold to the silicon (111) surface observed by Auger emission spectroscopy and by LEED

Bishop

Riviére

1969

J. Phys. D: Appl. Phys.

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“…TEM was used for the first studies of the growth of thin gold films on surfaces of Si(111) (9). Micrographs of films with thicknesses of 1.0 to 3.0 nm revealed a mixing of the initially deposited gold (equivalent thickness = 1.0 nm) and the silicon.…”

Section: Gold On Si(111) At Room Temperaturementioning

confidence: 99%

The initial growth of vapour deposited gold films

Andersson

1982

Gold Bull

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Gold films are extensively used in the production of both ohmic-and Schottky- Studies of gold films have a long history and the use of evaporated gold films to protect and to gild surfaces emerged more or less in parallel with the development of vacuum techniques. Since then, films of gold have been studied to a greater extent than those of any other metal, because of both the relative simplicity of gold evaporation and the resistance of gold to chemical attack during and after the deposition process. The literature on gold films therefore constitutes a large proportion of the literature on metal films in general. Although the mechanisms of growth of metal films have been the subject of excellent reviews such as those of Lewis and Anderson (1), Robins (2), and Le Lay and Kern (3), these articles have tended to concentrate on growth from the nucleation stage onwards. Much less attention has been paid to the pre-nucleation stage.In the present review, attention will therefore be focussed mainly upon this pre-nucleation stage and specifrcally upon the interaction of evaporated gold with surfaces and the growth of the first few atomic monolayers of films of this metal. Particular attention will be paid to the early stages of growth of gold films on semiconductor surfaces as a large research effort has been concentrated recently in this area. The reason for this is the extensive use of such films in the establishment of electrical contacts of the ohmic and Schottky types.Gold films on silicon and GaAs usually foren Schottky barriers even at monolayer (ML) thicknesses. A detailed knowledge of the mechanisms by which they are formed on these semiconductors is therefore of great importance. The film growth has been found to differ according to whether it occurs on clean ordered surfaces or upon surfaces which are either disordered per se or as .a result of the presence of contaminants.For the study of the growth of gold films especially at monolayer level on clean or ordered surfaces, such as those of clean silicon or GaAs, ultra high vacuum (UHV) techniques and analytical methods such as Auger electron spectroscopy (AES), photoelectron spectroscopy (PES) and electron diffraction have been all-important. Initial film growth is characterized by strong interactions between gold atoms and the substrate surface, leading to intermixing of the metal and the substrate. At low temperatures, typically room temperature, the first monolayer of gold is deposited in a disordered state, and gives rise to the subsequent formation of a mixed compound layer (silicide or alloy) upon which nucleation of gold may occur. At elevated temperatures (typically several hundred Celsius), reconstructions occur within the first monolayer of gold on silicon. Interdiffusion is fast and in thicker films of gold, on GaAs for example, leads to a thick intermixed region. The presence of small controlled amounts of impurities on clean surfaces of silicon and GaAs leads to a marked change in the surface reactions with evaporated gold. With increased impuri...

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Thermal spiking in high energy bombarded silicon

Brack

Schwuttke

1971

Phys. Stat. Sol. (a)

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Thermal spiking in 2 MeV N+ bombarded silicon is reported. In areas of most intense irradiation the amorphous silicon, a result of the ion bombardment, can melt locally and subsequently crystallize. The crystallized silicon has the same crystalliuity and orientation as the surrounding lattice. In these areas the matrix lattice becomes strained. The strained lattice is visible in X‐ray topographs through the presence of moiré fringes. The strained area around the crystallized silicon is soluble in HF.

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The structure of ion-implanted gold layers in single crystal silicon

Cited by 11 publications

References 9 publications

Segregation of gold to the silicon (111) surface observed by Auger emission spectroscopy and by LEED

Segregation of gold to the silicon (111) surface observed by Auger emission spectroscopy and by LEED

The initial growth of vapour deposited gold films

Thermal spiking in high energy bombarded silicon

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