The structure of silicon nitride films. III. Oxidation of Silicon Nitride — Defects

The formation of buried layers of silicon nitride by nitrogen-ion implantation in single-crystal silicon is studied. He+ backscattering, x-ray diffraction, scanning and transmission electron microscopies, and infrared absorption measurements were used for the physico-chemical characterization; sheet resistivity determination, spreading-resistance profile, and currentvoltage characteristics for the electrical characterization. It is shown that, for lS0-keV nitrogen ions, a fluence about 10 18 NI cm 2 must be implanted in order to obtain a continuous layer of silicon nitride and that annealing must be performed at 1200 °C to make it homogeneous and electrically insulating. The Si3N4 layer obtained crystallizes in the a phase and presents properties nearly similar to those of deposited layers. It is demonstrated that the conditions of implantation (energy, substrate temperature, beam intensity) playa fundamental role in the structure of the superficial silicon layer: the substrate must not be amorphized up to the surface during the implantation to obtain, after annealing, a monocrystalline surface layer suitable, for instance, for further epitaxy.

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The structure of silicon nitride films. III. Oxidation of Silicon Nitride — Defects

Abstract: The properties of the silicon‐silicon nitride system after oxidative annealing are considered. It is shown that the main product of oxidation is silica. Defects in silicon nitride film structures which are mostly caused by carbon are analysed.

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References 7 publications

Ion beam synthesis of Si3N4 amorphous buried layers

Ion beam synthesis of Si3N4 amorphous buried layers

Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer

Study of buried silicon nitride layers synthesized by ion implantation

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