In situ band gap mapping of the V 2 O 5 001 crystal surface revealed a reversible metal-to-insulator transition at 350-400 K, which occurs inhomogeneously across the surface and expands preferentially in the direction of the vanadyl (V O) double rows. Supported by density functional theory and Monte Carlo simulations, the results are rationalized on the basis of the anisotropic growth of vanadyloxygen vacancies and a concomitant oxygen loss driven metal-to-insulator transition at the surface. At elevated temperatures irreversible surface reduction proceeds sequentially as V 2 O 5 001 ! V 6 O 13 001 ! V 2 O 3 0001. DOI: 10.1103/PhysRevLett.99.226103 PACS numbers: 68.47.Gh, 68.35.ÿp, 73.20.ÿr Vanadium oxides represent an important class of materials with high potential in many technological applications based on their diverse temperature-dependent electronic, magnetic, and catalytic properties (e.g., [1][2][3][4] and references therein). There is a large variety of the vanadium oxide phases such as VO (V 2 , rocksalt structure),Depending on the ambient conditions and temperature, phase transformations between these oxides can occur. They may involve the formation of mixed valence phases. In addition, several vanadium oxides undergo metal-to-insulator transitions (MIT), e.g., V 2 O 3 at 150 K, VO 2 at 340 K. These complex structural and electronic transformations may play a crucial role in the behavior of vanadia-based systems.Among the surface structures of vanadium oxides [4], the V 2 O 5 001 surface seems to be the most studied [3,[5][6][7][8][9][10][11][12]. This surface exposes vanadyl (V O) double rows along the [010] direction [ Fig. 1(a)], which were observed also with scanning tunneling microscopy (STM) [10,11] and atomic force microscopy [12]. Surprisingly, the V O termination has been found also for the most stable, (0001) surface of V 2 O 3 [4,13,14], whereas the VO 2 110 surface appears to follow the respective bulk termination [1,4,15,16].Since the thermally induced transformations of vanadium oxides may be initiated at the surface and even be restricted to the surface layers, it is important to study their surface structures in the early stages of transitions when several structures may coexist. In this respect, STM combined with scanning tunneling spectroscopy (STS) can provide direct information on both geometrical and electronic structures of oxide surfaces (see, e.g., [17] ). We here report thermally induced reconstructions observed by STM/STS on a V 2 O 5 001 single crystal surface. Data show that V 2 O 5 , which is not known for the MIT in the bulk, exhibits, however, the MIT at the surface which proceeds through the formation and anisotropic growth of vanadyl-oxygen vacancies and is followed by an irreversible surface reduction. The experimental findings are supported by density functional theory (DFT) and