2015
DOI: 10.1007/s10762-015-0208-y
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The Study of 0.34 THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

Abstract: A planar Schottky barrier diode with the designed Schottky contact area of approximately 3 μm 2 is developed on gallium arsenide (GaAs) material. The measurements of the developed planar Schottky barrier diode indicate that the zero-biased junction capacitance C j0 is 11.0 fF, the parasitic series resistance R S is 3.0 Ω, and the cut off frequency f T is 4.8 THz. A monolithically integrated fourth subharmonic mixer with this diode operating at the radio frequency (RF) signal frequency of 0.34 THz with the chip… Show more

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Cited by 7 publications
(5 citation statements)
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“…The higher the number of harmonics, the lower the frequency and cost of the local oscillator (LO). Semiconductor-based THz heterodyne receivers, generally operating at room temperature, have been widely developed using Schottky barrier diodes [2], high-electron-mobility transistors [3], complementary metal-oxide-semiconductor [4] and silicon-germanium [5] technologies. However, the maximum harmonic number up to 20 is from the Schottky barrier diode produced by Virginia Diodes, Inc. (VDI) [6].…”
Section: Introductionmentioning
confidence: 99%
“…The higher the number of harmonics, the lower the frequency and cost of the local oscillator (LO). Semiconductor-based THz heterodyne receivers, generally operating at room temperature, have been widely developed using Schottky barrier diodes [2], high-electron-mobility transistors [3], complementary metal-oxide-semiconductor [4] and silicon-germanium [5] technologies. However, the maximum harmonic number up to 20 is from the Schottky barrier diode produced by Virginia Diodes, Inc. (VDI) [6].…”
Section: Introductionmentioning
confidence: 99%
“…The DSB noise temperature is lower than 1500 K and the DSB conversion loss is less than 10 dB at the frequency band. In addition, some similar unbiased sub-harmonic mixer designs can be found in Reference [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Under appropriate dc biasing and LO pumping conditions, the RF signal can be downconverted to an intermediate-frequency (IF) signal by heterodyne mixing. Compared to the semiconductor receiver [22][23][24][25] and LTS receiver [26][27][28][29] technologies, such a coherent detection based on HTS Josephson junction offers the advantage of relatively high sensitivity in the THz band while featuring a small and inexpensive cryogenic system. However, due to the intrinsic low-impedance characteristics of single Josephson junction, impedance mismatching inevitably brings poor signal coupling and thus limits the further improvement of sensitivity or noise performance.…”
Section: Introductionmentioning
confidence: 99%
“…Under appropriate dc biasing and LO pumping conditions, the RF signal can be downconverted to an intermediate-frequency (IF) signal by heterodyne mixing. Compared to the semiconductor receiver[22][23][24][25] and LTS receiver[26][27][28][29] technologies, such a coherent detection based on HTS Josephson junction offers the advantage of relatively high sensitivity in the THz band while…”
mentioning
confidence: 99%