2024
DOI: 10.1088/1402-4896/ad56d9
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The study of electron mobility on ultra-scaled silicon nanosheet FET

Tongfei Liu,
Ali Rezaei,
Kaige Yang
et al.

Abstract: The nanosheet FET (NSFET) is the successor to FinFET, and its mobility significantly affects device performance. In this paper, we investigate the impact of phonon (ph) and surface roughness (SR) scattering on the electron mobility of n-type silicon NSFETs. The effects of channel width, thickness, and doping concentrations on NSFETs' mobility are also analyzed. Non-Equilibrium Green’s Function (NEGF) solver which incorporates scattering mechanisms using the self-energy formulation is employed. The mobility beh… Show more

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