2011
DOI: 10.1016/j.physb.2011.04.005
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The study of melting stage of bulk silicon using molecular dynamics simulation

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Cited by 14 publications
(5 citation statements)
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“…Having defects, which in this case are introduced as “cracks” within the system, be it a TAG system or otherwise, has been shown to be very important to avoid superheating of the system and thus avoid overestimation of the melting point. The presence of voids lowers the estimated melting point due to a lowering of the melting nucleation energy until a plateau is reached with increasing void size. , While the proportion of the size of the defect to the crystal size is orders of magnitude larger than that observed in real crystals, this methodology has been shown to be both simple and effective. A more in-depth discussion on this can be found in our previous paper and elsewhere. , Plotting the average melting onset temperature versus the void size in the crystal shows a clear decrease in the average melting point with increasing void size until a plateau is reached, followed by a sharp decrease in the melting point at larger void sizes, indicating the mechanical collapse of the system, with the melting point before the drop taken to be the melting point of the system. , This methodology was tested on five different TAGs, including the TAGs being used in this study, with the simulated melting points being in very good agreement with the empirical melting points …”
Section: Resultsmentioning
confidence: 99%
“…Having defects, which in this case are introduced as “cracks” within the system, be it a TAG system or otherwise, has been shown to be very important to avoid superheating of the system and thus avoid overestimation of the melting point. The presence of voids lowers the estimated melting point due to a lowering of the melting nucleation energy until a plateau is reached with increasing void size. , While the proportion of the size of the defect to the crystal size is orders of magnitude larger than that observed in real crystals, this methodology has been shown to be both simple and effective. A more in-depth discussion on this can be found in our previous paper and elsewhere. , Plotting the average melting onset temperature versus the void size in the crystal shows a clear decrease in the average melting point with increasing void size until a plateau is reached, followed by a sharp decrease in the melting point at larger void sizes, indicating the mechanical collapse of the system, with the melting point before the drop taken to be the melting point of the system. , This methodology was tested on five different TAGs, including the TAGs being used in this study, with the simulated melting points being in very good agreement with the empirical melting points …”
Section: Resultsmentioning
confidence: 99%
“…The system includes 4096 silicon atoms with periodic boundary condition (PBC). The atomic interactions are described using the Stillinger–Weber potential (SW potential) 37 , which is known to reproduce qualitatively the behavior of silicon well 33 38 . To obtain the supercooled liquid, the initial equilibrium liquid drop some temperature, such as 10 K, and repeat a relaxation under constant number, pressure, temperature (NPT) ensemble.…”
Section: Methodsmentioning
confidence: 99%
“…78 This index is a simple but effective measure of thermally driven disorder and is often used to characterize the thermal evolution of systems. [79][80][81] In many cases, this parameter has proved advantageous over an order parameter 82 and potential energy. 83 For a system of N atoms, the local Lindemann index, d i , for the i-th atom in the system is defined as the rootmean-squared (rms) bond length fluctuation,…”
Section: Methodsmentioning
confidence: 99%