The study of p-Si/Al2O3/n-Si (100) sandwiches structures deposited by KrF excimer laser ablation.

Abstract

Abstract:Laser ablation is a versatile technique for deposition of metals, semiconductors as well as dielectrics. Our pulsed laser deposition (PLD) system is set up into an ultra-high vacuum (UHV) machine with working pressure of 1.5*10 -10 Torr. In this work we report the successfully deposition of sandwiches structures p-Si/Al2O3/n-Si (100) substrate. The obtained thin layers were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM) and composition was investigated by energy dispersive X-ray (EDX). Also micro Raman spectroscopy was involved for measurement of the stress in nSi (100) substrates as well as top deposited p-Si. Depositions were performed at three different values for: distance between target and substrate (3, 4, 5 [cm]), temperature of substrate (400, 500, 600 [°C]), laser pulse energy (400, 500, 580 [mJ]) and laser pulse repetition rate (20, 30, 40 [Hz]). We conclude that the optimally conditions for Al 2 O 3 layer are: 5 cm, 500°C, 580 mJ, 20 Hz and for top p-Si same values except the pulse repetition rate, which is 30 Hz.

Surface Topography of Si/TiO2 Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation

“…In order to study the characteristics of the Si/TiO 2 /n-Si (100) sandwiches structures, the samples were taken out after the TiO 2 deposition, and a Ti foil mask was applied to partially cover the surface before the deposition of the top Si layer [9]. Thus, access to both deposited layers was gained for further investigations.…”

“…A different approach in creating the buried oxide layers can be provided by a versatile technique, which is pulsed laser deposition (PLD) [9][10][11][12]. This study focuses on the preparation and characterization of silicon-oxide-silicon structures obtained as stacked thin films deposited on silicon wafer by PLD.…”